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参数资料
| 型号： | M93C46DS |
| 厂商： | 意法半导体 |
| 英文描述： | 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
| 中文描述： | 16Kbit，8Kbit，4Kbit，2Kbit，1Kbit和256 8位或16位全 |
| 文件页数： | 9/31页 |
| 文件大小： | 611K |
| 代理商： | M93C46DS |
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M93C86, M93C76, M93C66, M93C56, M93C46
Erase
The Erase Byte or Word (ERASE) instruction sets
the bits of the addressed memory byte (or word) to
1. Once the address has been correctly decoded,
the falling edge of the Chip Select Input (S) starts
the self-timed Erase cycle. The completion of the
cycle can be detected by monitoring the Ready/
Busy line, as described in the
READY/BUSY STA-
TUS
section.
Write
For the Write Data to Memory (WRITE) instruction,
8 or 16 data bits follow the op-code and address
bits. These form the byte or word that is to be writ-
ten. As with the other bits, Serial Data Input (D) is
sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled,
the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C).
If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
be started, and the addressed location will not be
programmed. The completion of the cycle can be
detected by monitoring the Ready/Busy line, as
described later in this document.
Once the Write cycle has been started, it is inter-
nally self-timed (the external clock signal on Serial
Clock (C) may be stopped or left running after the
start of a Write cycle). The cycle is automatically
preceded by an Erase cycle, so it is unnecessary
to execute an explicit erase instruction before a
Write Data to Memory (WRITE) instruction.
Figure 5. ERASE, ERAL Sequences
Note: For the meanings of An and Xn, please see
Table 5.
,
Table 6.
and
Table 7.
.
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
0
An
A0
Xn X0
ADDR
相关PDF资料 |
PDF描述 |
|---|---|
| M93C46BN | 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
| M93C46-WMN | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93S56-BN3G | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-MN3T | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-MN3TG | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93C46-DS | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C46-DS3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C46-DS3G/S | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
| M93C46-DS3G/W | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
| M93C46-DS3P/S | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
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