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参数资料
| 型号： | M93C56-BN3 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
| 封装： | PLASTIC, DIP-8 |
| 文件页数： | 30/31页 |
| 文件大小： | 611K |
| 代理商： | M93C56-BN3 |
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M93C86, M93C76, M93C66, M93C56, M93C46
8/31
Read
The Read Data from Memory (READ) instruction
outputs data on Serial Data Output (Q). When the
instruction is received, the op-code and address
are decoded, and the data from the memory is
transferred to an output shift register. A dummy 0
bit is output first, followed by the 8-bit byte or 16-
bit word, with the most significant bit first. Output
data changes are triggered by the rising edge of
Serial Clock (C). The M93Cx6 automatically incre-
ments the internal address register and clocks out
the next byte (or word) as long as the Chip Select
Input (S) is held High. In this case, the dummy 0 bit
is not output between bytes (or words) and a con-
tinuous stream of data can be read.
Erase/Write Enable and Disable
The Erase/Write Enable (EWEN) instruction en-
ables the future execution of erase or write instruc-
tions, and the Erase/Write Disable (EWDS)
instruction disables it. When power is first applied,
the M93Cx6 initializes itself so that erase and write
instructions are disabled. After an Erase/Write En-
able (EWEN) instruction has been executed, eras-
ing and writing remains enabled until an Erase/
Write Disable (EWDS) instruction is executed, or
until VCC falls below the power-on reset threshold
voltage. To protect the memory contents from ac-
cidental corruption, it is advisable to issue the
Erase/Write Disable (EWDS) instruction after ev-
ery write cycle. The Read Data from Memory
(READ) instruction is not affected by the Erase/
Write Enable (EWEN) or Erase/Write Disable
(EWDS) instructions.
Figure 4. READ, WRITE, EWEN, EWDS Sequences
AI00878C
1 1 0 An
A0
Qn
Q0
DATA OUT
D
S
Q
READ
S
WRITE
ADDR
OP
CODE
1 0An
A0
DATA IN
D
Q
OP
CODE
Dn
D0
1
BUSY
READY
S
ERASE
WRITE
ENABLE
1
0Xn X0
D
OP
CODE
1
01
S
ERASE
WRITE
DISABLE
1
0Xn X0
D
OP
CODE
0
CHECK
STATUS
ADDR
相关PDF资料 |
PDF描述 |
|---|---|
| M93C76-MB6TP | 512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| M93C76-WDS6G | 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| ML1I-65656V-100SHXXX | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| MLCP-65656V-100/883 | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| ML1I-65656L-80/883:D | 32K X 8 STANDARD SRAM, 80 ns, CDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93C56-BN3G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
| M93C56-BN3G/S | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
| M93C56-BN3G/W | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
| M93C56-BN3P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
| M93C56-BN3P/S | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM |
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