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参数资料
型号： M93C66-DW7T
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装： 0.169 INCH, TSSOP-8
文件页数： 28/31页
文件大小： 590K
代理商： M93C66-DW7T
M93C86, M93C76, M93C66, M93C56, M93C46
6/31
MEMORY ORGANIZATION
The M93Cx6 memory is organized either as bytes
(x8) or as words (x16). If Organization Select
(ORG) is left unconnected (or connected to VCC)
the x16 organization is selected; when Organiza-
tion Select (ORG) is connected to Ground (VSS)
the x8 organization is selected. When the M93Cx6
is in stand-by mode, Organization Select (ORG)
should be set either to VSS or VCC for minimum
power consumption. Any voltage between VSS
and VCC applied to Organization Select (ORG)
may increase the stand-by current.
INTERNAL DEVICE RESET
In order to prevent inadvertent Write operations
during Power-up, a Power On Reset (POR) circuit
is included.
At Power-up and Power-down, the device must
not be selected (that is, the Chip Select Input (S)
must be driven Low) until the supply voltage
reaches the operating voltage VCC (as defined in
Tables 9, 10 and 11).
During Power-up (phase during which VCC is low-
er than VCCmin but increases continuously), the
device will not respond to any instruction until VCC
has reached the Power On Reset threshold volt-
age (this threshold is lower than the minimum VCC
operating voltage defined in DC AND AC PARAM-
ETERS). Once VCC has passed the POR thresh-
old, the device is reset.
Prior to selecting the memory and issuing instruc-
tions to it, a valid and stable VCC voltage must be
applied. This voltage must remain stable and valid
until the end of the transmission of the instruction
and, for a Write instruction, until the completion of
the internal write cycle (tW).
During Power-down (phase during which VCC de-
creases continuously), as soon as VCC drops from
the normal operating voltage below the Power On
Reset threshold voltage, the device stops re-
sponding to any instruction sent to it.
ACTIVE POWER AND STANDBY POWER MODES
When Chip Select (S) is High, the device is select-
ed and in the Active Power mode. It consumes
ICC, as specified in Tables 15, 16, 17, 18 and 19.
When Chip Select (S) is Low, the device is dese-
lected.
If no Erase/Write cycle is in progress when Chip
Select goes Low, the device enters the Standby
Power mode, and the power consumption drops to
ICC1.
For the M93Cx6 devices (5V range) the POR
threshold voltage is around 3V. For the M93Cx6-
W (3V range) and M93Cx6-R (2V range) the POR
threshold voltage is around 1.5V.
相关PDF资料
PDF描述
M93C66-WDS7TG 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
M93S66-DW1 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
M93S66-WDS3TG 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
M93S66-WDS3TP 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
MA-141-003-261-A03XH 3 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, CRIMP, RECEPTACLE
相关代理商/技术参数
参数描述
M93C-66MB7TG 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM
M93C66-MN3 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
M93C66-MN3T 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
M93C66-MN6 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
M93C66-MN6P 功能描述:IC EEPROM 4KBIT 2MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR)
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