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参数资料
| 型号： | M93C66-DW7T |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.169 INCH, TSSOP-8 |
| 文件页数： | 31/31页 |
| 文件大小： | 590K |
| 代理商： | M93C66-DW7T |
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M93C86, M93C76, M93C66, M93C56, M93C46
Read
The Read Data from Memory (READ) instruction
outputs data on Serial Data Output (Q). When the
instruction is received, the op-code and address
are decoded, and the data from the memory is
transferred to an output shift register. A dummy 0
bit is output first, followed by the 8-bit byte or 16-
bit word, with the most significant bit first. Output
data changes are triggered by the rising edge of
Serial Clock (C). The M93Cx6 automatically incre-
ments the internal address register and clocks out
the next byte (or word) as long as the Chip Select
Input (S) is held High. In this case, the dummy 0 bit
is
not output between bytes (or words) and a con-
tinuous stream of data can be read.
Erase/Write Enable and Disable
The Erase/Write Enable (EWEN) instruction en-
ables the future execution of erase or write instruc-
tions, and the Erase/Write Disable (EWDS)
instruction disables it. When power is first applied,
the M93Cx6 initializes itself so that erase and write
instructions are disabled. After an Erase/Write En-
able (EWEN) instruction has been executed, eras-
ing and writing remains enabled until an Erase/
Write Disable (EWDS) instruction is executed, or
until VCC falls below the power-on reset threshold
voltage. To protect the memory contents from ac-
cidental corruption, it is advisable to issue the
Erase/Write Disable (EWDS) instruction after ev-
ery write cycle. The Read Data from Memory
(READ) instruction is not affected by the Erase/
Write Enable (EWEN) or Erase/Write Disable
(EWDS) instructions.
Figure 4. READ, WRITE, EWEN, EWDS Sequences
AI00878C
1 1 0 An
A0
Qn
Q0
DATA OUT
D
S
Q
READ
S
WRITE
ADDR
OP
CODE
1 0An
A0
DATA IN
D
Q
OP
CODE
Dn
D0
1
BUSY
READY
S
ERASE
WRITE
ENABLE
1
0Xn X0
D
OP
CODE
1
01
S
ERASE
WRITE
DISABLE
1
0Xn X0
D
OP
CODE
0
CHECK
STATUS
ADDR
相关PDF资料 |
PDF描述 |
|---|---|
| M93C66-WDS7TG | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| M93S66-DW1 | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| M93S66-WDS3TG | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| M93S66-WDS3TP | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| MA-141-003-261-A03XH | 3 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, CRIMP, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93C-66MB7TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C66-MN3 | 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C66-MN3T | 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C66-MN6 | 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C66-MN6P | 功能描述:IC EEPROM 4KBIT 2MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
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