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参数资料
| 型号： | M93S56-WMN6 |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位宽MICROWIRE串行EEPROM的访问与街区保护 |
| 文件页数： | 10/34页 |
| 文件大小： | 525K |
| 代理商： | M93S56-WMN6 |
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M93S66, M93S56, M93S46
10/34
Figure 5. PAWRITE and WRAL Sequence
Note: For the meanings of An, Xn and Dn, please see
Table 2.
and
Table 3.
.
Page Write
A Page Write to Memory (PAWRITE) instruction
contains the first address to be written, followed by
up to 4 data words.
After the receipt of each data word, bits A1-A0 of
the internal address register are incremented, the
high order bits remaining unchanged (A7-A2 for
M93S66, M93S56; A5-A2 for M93S46). Users
must take care, in the software, to ensure that the
last word address has the same upper order ad-
dress bits as the initial address transmitted to
avoid address roll-over.
The Page Write to Memory (PAWRITE) instruction
will not be executed if any of the 4 words address-
es the protected area.
Write Enable (W) must be held High before and
during the instruction. Input address and data, on
Serial Data Input (D) are sampled on the rising
edge of Serial Clock (C).
After the last data bit has been sampled,
the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C).
If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
AI00890C
S
PAGE
WRITE
1 1
An
A0
DATA IN
D
Q
OP
CODE
Dn
D0
1
BUSY
READY
CHECK
STATUS
ADDR
PRE
W
S
WRITE
ALL
1 0
Xn X0
DATA IN
D
Q
OP
CODE
Dn
D0
0
BUSY
READY
CHECK
STATUS
ADDR
PRE
W
0 1
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相关代理商/技术参数 |
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|---|---|
| M93S56-WMN6G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WMN6P | 功能描述:电可擦除可编程只读存储器 2.5 V to 5.5V 16K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93S56-WMN6T | 功能描述:电可擦除可编程只读存储器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93S56-WMN6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WMN6TP | 功能描述:电可擦除可编程只读存储器 2KBIT E-EPROM RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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