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| 型号： | MA1916 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation Hard Reed-Solomon & Convolution Encoder |
| 中文描述： | 辐射硬里德所罗门 |
| 文件页数： | 5/11页 |
| 文件大小： | 94K |
| 代理商： | MA1916 |
MA1916
5/11
DC CHARACTERISTICS AND RATINGS
Parameter
Min
Max
Units
Supply Voltage
-0.5
7
V
Input Voltage
-0.3
V
DD
+0.3
V
Current Through Any Pin
-20
+20
mA
Operating Temperature
-55
125
°
C
Storage Temperature
-65
150
°
C
CE_CLK (Convolution Encoder Clock)
The CE_CLK input drives the timing of the convolution
encoder. Data is read in on CE_IN on the rising edge of
CE_CLK and output on CE_OUT on both the rising and falling
edge of CE_CLK.
Note:
The output data rate is twice the input data rate.
A 50% duty cycle clock is required. If this is provided by the
CLKS output, data can be read directly from RSE_OUT to the
CE_IN input (see figure 3).
CE_OUT (Convolution Encoder Output)
This signal carries the output data from the convolution
encoder. The data rate on CE_OUT is twice that of CE_IN.
CLK_OUT (Clock Out)
CLK_OUT is a buffered output of the CLK input signal. If
CLKS is connected to CE_CLK to drive the convolution
encoder, CE_OUT can be captured on the falling edge of
CLK_OUT.
Note:
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
DD
V
IH
V
IL
V
OH
V
OL
I
IL
I
PDL
I
DD1
I
DD2
Supply Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
CMOS Output High Voltage
CMOS Output Low Voltage
Input Leakage Current
Input Pull-Down Current
Static Power Supply Current
Dynamic Power Supply Current
-
4.5
5.0
-
-
-
-
-
-
0.1
3
5.5
V
DD
V
V
V
V
V
μ
A
μ
A
mA
mA
V
DD
= 5.5V
V
DD
= 5.5V
0.8 V
DD
V
SS
V
DD
-0.5
-
-10
-20
-
-
0.2 V
DD
-
0.4
10
150
2.5
10
V
DD
= 5V, I
OH
= -1.0mA
V
DD
= 5V, I
OL
= 4.0mA
V
DD
= 5.5V, V
IN
= V
SS
or V
DD
V
DD
= 5.5V, V
IN
= V
SS
or V
DD
V
DD
= 5.5V
CLK = 10MHz, V
DD
= 5.5V
Notes:
1. V
DD
= 5V
±
10%, over full operating temperature range. 2. Total dose radiation not exceeding 1x10
5
Rads(Si)
3. Mil-Std-883, method 5005, subgroups 1, 2, 3
Table 4: DC Electrical Characteristics
AC CHARACTERISTICS
No.
Parameter
Min.
Max.
Units
1
2
3
4
5
6
7
8
9
10
11
12
13
CLK hlgh to CLKS
CLK high to SYZ or SZY
SMC hold after CLK low
SMC setup to CLK low
MSG set up to CLKS high
MSG hold after CLKS high
MSG to RSE_OUT propagation delay
CLKS to RSE_OUT (SMC low)
CLK to CLK_OUT propagation delay
CE_IN setup to CE_CLK hlgh
CE_IN hold after CE_CLK high
CE_CLK to CE_OUT
CLK CYCLE TIME
-
-
25
30
-
-
-
-
30
25
25
-
-
25
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
30
10
10
-
-
-
10
10
-
100
Table 5: AC Electrical Characteristics
Note:
Mil-Std-883, method 5005,
subgroups 9, 10, 11
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