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参数资料
| 型号： | MA40279L |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, S-X BAND, MIXER DIODE |
| 封装： | CASE 942, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 63K |
| 代理商： | MA40279L |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
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Asia/Pacific: Tel. +81 (03) 3226-1671
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+44 (1344) 869 595
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Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
V3.00
Schottky Barrier Beam Lead
Anti-Parallel Pairs
MA40278, MA40279 Series
Features
q
Small Physical Size for Microstrip Mounting
q
High Reliability
q
Closely Matched Junctions
q
Three Diode Barrier Heights are Available
q
Minimum Parasitics for Broadband Designs
q
Suited for Subharmonically Pumped Mixers
Description
Each Schottky barrier diode pair consists of two closely
matched diodes connected in an anti-parallel pair config-
uration. The diodes are formed monolithically to assure
close matching of electrical characteristics such as capaci-
tance, forward voltage and series resistance. The silicon
that originally connected the diodes in the wafer is
removed to isolate each diode. The beam lead construc-
tion minimizes parasitic capacitance and lead inductance.
It enables interconnection of the diodes in anti-parallel
pairs at the wafer level.
Three barrier height levels are available for different local
oscillator drive power. The MA40278L and MA40279L
devices feature a low barrier for applications which have
low available local oscillator power. Both medium barrier
(MA40278M and MA40279M) and high barrier (MA40278H
and MA40279H) devices are available for applications
with higher drive levels. The higher LO price can improve
dynamic range.
Case Style 942
Applications
These diodes are intended primarily for use in subhar-
monic mixers. The minimal electrical parasitics are well-
suited for miniature broadband components. The low bar-
rier devices should be used whenever optimum noise fig-
ure is required with +3 dBm or less of local oscillator drive
power. Medium barrier devices should be used where
minimum noise figures are desired at LO drive levels
between +3 dBm and +6 dBm. Minimum noise figures can
be obtained at LO drive levels in excess of +6 dBm by
using high barrier devices. The diode configuration is
shown below.
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