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参数资料
| 型号： | MA4BPS101 |
| 元件分类： | PIN二极管 |
| 英文描述： | 70 V, SILICON, PIN DIODE |
| 封装： | DIE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 83K |
| 代理商： | MA4BPS101 |
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
M/A-COM Division of AMP Incorporated
Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.01
Features
Bond Pads Removed From Active Junction
Large Bond Pads Support Multiple Bond Wires
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polyimide Scratch Protection
Description
These
silicon - glass
PIN diode chips are fabricated with
M/A-COM’s patented HMIC process. They contain a single
shunt silicon PIN diode embedded in a glass substrate with dual
75 x 150 micron bond pads located near the chip edges. The large
pads allow use of multiple bond wires. The location of these pads
on a glass substrate results in low parasitic capacitance.
The
diode junction is passivated with silicon nitride and a layer of
polyimide has been added for scratch protection during assembly.
The devices are available on industry standard tape frame for
automatic insertion and assembly in high volume applications.
Applications
These diodes are designed for use as general PIN elements in
switches and switched pad attenuators. The chips can handle up
to 10 watts of RF power, and are well suited for use in T/R
switches for subscriber phones, particularly the higher power and
higher frequency systems for satellite based systems. They are
also useful for the switching element in phased array radar appli-
cations. The larger bond pad allows for two (2) 1 mil dia contact
wires which reduces the bond wire inductance almost in half.
MA4BPS101
MA4BPS201
MA4BPS301
Parameters
Symbol
Units
Test Conditions
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Total Capacitance
C
T
pF
-5 Volts at 1 MHz
0.13
0.17
0.20
0.25
0.30
0.35
Series Resistance
1
Rs
+10 mA at 1 GHz
1.9
2.4
1.0
1.3
0.9
1.2
Parallel Resistance
2
Rp
K
0 Volts at 1 GHz
14
6
Breakdown Voltage
Vb
Volts
-10 uA
70
110
70
110
70
110
Carrier Lifetime
2
T
L
nS
+10mA/-6mA
300
Thermal Impedance
2
θjc
°C/W
1A/.01A, 10 mS
38
28
24
Electrical Specifications @ +25°C
PIN Diode Chips with
Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
Chip Layout
Absolute Maximum Rating
1
Parameter
Absolute Maximum
Operating Temperature
-60
°C to +150°C
Storage Temperature
-65
°C to +175°C
Forward Current
100mA
Reverse Voltage
70 V
Incident RF Power
+40 dBm (CW)
Mounting Temperature
+320
°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
1. Guaranteed by correlation to 2 MHz on-wafer measurements.
2. Tested on a sample basis only.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4BPS201 | 制造商:M/A-COM Technology Solutions 功能描述:PIN ATTENUATOR/SWIT 70V 2PIN ODS-1244 - Bulk |
| MA4BPS301 | 制造商:M/A-COM Technology Solutions 功能描述:PIN ATTENUATOR/SWIT 70V 2PIN ODS-1244 - Bulk |
| MA4C5 | 制造商:EDAL 制造商全称:EDAL 功能描述:SILICON GENERAL PURPOSE 3.0 AMP DIODES |
| MA4CM00 | 制造商:TE Connectivity 功能描述: |
| MA4CM01 | 制造商:TE Connectivity 功能描述: |
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