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参数资料
| 型号： | MA4E1310 |
| 元件分类： | 射频混频器 |
| 英文描述： | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| 封装： | CASE 1278, FLIP CHIP-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 63K |
| 代理商： | MA4E1310 |
1
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V2
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Features
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
Description
M/A-COM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabri-
cated on a OMCVD epitaxial wafer using a proc-
ess designed for high device uniformity and ex-
tremely low parasitics. This device is fully pas-
sivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junc-
tion during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
Applications
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typi-
cal applications include single and double bal-
anced mixers in PCN transceivers and radios,
police radar detectors, automotive radar detec-
tors, etc. This device can be used through 110
GHz.
.
Case Style ODS-1278
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E1317 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E1317_V7 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:GaAs Flip Chip Schottky Barrier Diodes |
| MA4E1317-1 | 制造商:M/A-COM Technology Solutions 功能描述:SCD, AIL, DIODE, SCHOTTKY, BEAM LEAD, GAAS PROPRIETARY - Bulk |
| MA4E1318 | 功能描述:肖特基二极管与整流器 DC-80GHz Cap .09pF Junc. Cap .09pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E1319-1 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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