参数资料
型号: MA4E1310
元件分类: 射频混频器
英文描述: GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
封装: CASE 1278, FLIP CHIP-2
文件页数: 2/5页
文件大小: 63K
代理商: MA4E1310
2
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V2
MA4E1310
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
Symbol
Units
MA4E1310
Min.
Typ.
Max.
Junction Capacitance at 0V at 1 MHz
Cj
pF
.010
Total Capacitance at 0V at 1 MHz
1
Ct
pF
.025
.040
.045
Slope Resistance
2
Rd
Ohms
7
9
Forward Voltage at 1mA
Vf1
Volts
.60
.70
.80
Reverse Breakdown Voltage at @ 10uA
Vbr
Volts
4.5
7
SSB Noise Figure ( Estimated )
NF
dB
6.5
Notes:
1.
Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2.
Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)
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