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| 型号： | MA4E2054E1-1068T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1068, 4 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 135K |
| 代理商： | MA4E2054E1-1068T |
3
Surface Mount Low Barrier Schottky Diode
M/A-COM Products
Rev. V7
MA4E2054 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
Maximum Ratings
1
1. At 125 °C case temperature. Derate linearly to zero watts at 125 °C case temperature.
Parameter
Maximum Ratings
Operating Temperature
-65 to +125
Storage Temperature
-65 to +125
Incident RF Power (CW)
75*
Reverse Voltage @ 25 °C
3
Forward Current
20
Soldering Temperature (Standard Part #)
+235 for 5 sec.
Unit
°C
mW
V
mA
°C
Soldering Temperature (Lead Free Part #)
°C
+260 for 5 sec.
Electrostatic Discharge ( ESD ) Classification
2
-
Class 0
Electrical Specifications @ +25 °C
Parameter
Condition
Symbol
Specification
Breakdown Voltage
IR = 10 μA
VB
3.0 V min.
Reverse Leakage Current
VR = 1 V
IR
100 nA max.
Reverse Leakage Current
VR = 3 V
IR
500 nA max.
Total Capacitance
VR = 0 V
f = 1 MHz
CT
0.30 pF max.
Dynamic Resistance
3
IF = 10 mA
RD
17 Ohms max.
Forward Voltage
IF = 1 mA
VF
250 mV min.
350 mV min.
Forward Voltage Difference
2
IF = 1 mA
VF
20 mV max.
2. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.
3. RD = RS + RJ where RJ = 26
IF (in mA)
Typical RF Performance @ +25 °C in Chip Form, Mounted on a Microstrip Fixture
Parameter
Conditions
Typical Value
Mixer Noise Figure
4
f = 9.375 GHz
5.7 dB (SSB)
IF Impedance
IF = 30 MHz
200 ohms
Tangential Signal
Sensitivity
5
IF = 20 mA
BW = 2 MHz
-55 dBm
Detector Output, Voltage at -30 dBm
5
RL = 100K Ohms
IF = 20 μA
20 mV
Detector Output, Voltage at -30 dBm
5
RL = 1M Ohm
20 mV
4. Fixture tuned to 9.375 GHz.
5. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.
2. Human Body Model
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相关代理商/技术参数 |
参数描述 |
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| MA4E2054L-1261 | 功能描述:肖特基二极管与整流器 Brkdn V 3.0Volt min. 30pF max.-65 to 125C RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2054L-1261_V8 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Low Barrier Schottky Chip |
| MA4E2062 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Schottky Diode Ring Quads |
| MA4E2062H | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Schottky Diode Ring Quads |
| MA4E2062H-1068T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Schottky Diode Ring Quads |
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