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| 型号： | MA4E2054E1-1068T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1068, 4 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 135K |
| 代理商： | MA4E2054E1-1068T |
5
Surface Mount Low Barrier Schottky Diode
M/A-COM Products
Rev. V7
MA4E2054 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
Typical Performance Curves @ 25°C in Chip Form, Mounted on a Microstrip Fixture
Tuned Fixture Noise Figure vs Lo Power at 9.375 GHz
Forward Current vs Forward Voltage
and Temperature
0.01
0.1
1
10
100
1000
10000
-40
-30
-20
-10
0
10
INPUT PO W ER (dBm)
V
OU
T
(m
V
)
- - - - - - 1M oh m
________
100k oh ms
__ __ __
10k ohms
__ . . __ . .
5k oh ms
Detector Output Voltage vs Input Power and Load
Resistance. Diode at Zero Bias. Untuned Fixture at
9.375 GHz (50
Ω)
3
4
5
6
7
8
9
0.01
0.1
1
10
LO PO WER (mW)
N
O
IS
E
F
IG
U
R
E
(
d
B)
0.1
1
10
0
2
4
6
8
10
12
FREQ UENC Y (GHz )
V
OU
T
(m
V
)
- - - - - - 1M ohm
________
100k ohms
__ __ __
10k ohms
__ . . __ . .
5k ohms
Detector Output Voltage vs Frequency and Load
Resistance at -30 dBm. Diode at Zero Bias. Untuned
Fixture.
Detector Output Voltage vs. Frequency and Load
Resistance at -30 dBm. Diode Forward Biased at
20
μA. Untuned Fixture (50Ω)
Detector Output Voltage vs Input Power and Load
Resistance. Diode Forward Biased at 20
μA. Untuned
Fixture at 9.375 GHz.
0.01
0.1
1
10
0
50
100
150
200
250
300
350
400
450
500
V
F (m V)
I F
(m
A
)
+125oC
25oC
-50oC
0.01
0.1
1
10
024
68
10
12
FREQ UENC Y (GHz )
V
OU
T
(m
V
)
- - - - - - 1M oh m
________
100k oh ms
__ __ __
10k oh ms
__ . . __ . .
5k oh ms
0.01
0.1
1
10
100
1000
10000
-50-40
-30-20
-10
0
10
20
INPUT PO W ER (dBm)
V
OU
T
(m
V
)
- - - - - - 10k oh ms
________
1M ohm
__ __ __
5k ohms
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| MA4E2054B-287T | SILICON, LOW BARRIER SCHOTTKY, VHF-KU BAND, MIXER DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2054L-1261 | 功能描述:肖特基二极管与整流器 Brkdn V 3.0Volt min. 30pF max.-65 to 125C RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2054L-1261_V8 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Low Barrier Schottky Chip |
| MA4E2062 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Schottky Diode Ring Quads |
| MA4E2062H | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Schottky Diode Ring Quads |
| MA4E2062H-1068T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Schottky Diode Ring Quads |
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