参数资料
型号: MA4E2062M-1068
元件分类: 参考电压二极管
英文描述: SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
封装: PLASTIC, SOT-143, 4 PIN
文件页数: 2/3页
文件大小: 34K
代理商: MA4E2062M-1068
Silicon Schottky Diode Ring Quad Chips
MA4E2062 Series
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
Electrical Specifications at +25°C
Model Number
Forward Voltage
1
mV
Junction Capacitance
2
pF
Dynamic Resistance
3
at 10mA
V
F Typ.
V
F Max.
V
F
Max.
4
C
j Typ.
C
j Max.
C
j
Max.
5
R
D Max.
MA4E2062L
220
240
5
0.4
0.6
0.05
7.0
MA4E2062L-1068T
220
240
5
0.4
0.6
0.05
7.0
MA4E2062M
380
400
5
0.4
0.6
0.05
8.0
MA4E2062M-1068T
380
400
5
0.4
0.6
0.05
8.0
MA4E2062H
580
600
5
0.4
0.6
0.05
6.0
MA4E2062H-1068T
580
600
5
0.4
0.6
0.05
6.0
1. V
F is measured at IF = 1.0 mA
2. C
j is measured at VR = 0 V and f = 1 MHz between non-adjacent bondpads.
3. Series resistance, R
S, is the slope resistance less the junction resistance at IF = 10 mA.
4. 3
σ limit
5. 3
σ limit
Matching criteria between devices in quad.
R
D = RS + RJ where RJ = 26
IF (in mA)
Circuit Model and Model Parameters
The preceding schematic and the non-linear circuit model param-
eters given will provide an accurate representation of the ring
quad for use in harmonic balance simulators using the software’s
built-in diode model. It may be important to include the effects
of bond wire inductance in the model of your circuit.
A
reasonable guideline is to use ~0.02 nH per 0.001” of length for
0.001” diameter gold wire. A SPICE netlist is also included for
reference.
Schematic
Schottky Junction
R J
R S
C j 0
Net List
.subckt MA4E2062L 1 2 3 4
*
M/A-COM ISBU All Rights Reserved
*
MA4E2062 Ring Quad
*
diode junctions
D1
1
2
dma
D2
2
3
dma
D3
3
4
dma
D4
4
1
dma
.model dma ( is=566n ikf=0.02 n=1.04
+ rs=1.4 eg=0.7 xti=2 tt=0
+ cj0=0.32p m=0.23 fc=0.1 vj=0.16)
.ends
Parameter
L
M
H
IS
5.66n
3n
2n
IKF
0.02
N
1.04
1.05
1.68
RS
1.4
1.7
1.0
CJ0
0.32p
0.17p
0.40p
M
0.23
0.041
0.8
FC
0.1
0.2
VJ
0.16
0.07
0.70
EG
0.7
XTI
2
TT
0
Spice Model Parameters
1
1
Guiseppe Massabrio and Paolo Antognetti
Semiconductor Device Modeling with
SPICE
McGraw-Hill 1993, 2nd Edition
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