- 您现在的位置：买卖IC网 > PDF目录81072 > MA4E2200D1-287T SILICON, ZERO BARRIER SCHOTTKY, S BAND, MIXER DIODE PDF资料下载
参数资料
| 型号： | MA4E2200D1-287T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, ZERO BARRIER SCHOTTKY, S BAND, MIXER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 287, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 98K |
| 代理商： | MA4E2200D1-287T |
4
Surface Mount Zero Bias Schottky Detector Diodes
M/A-COM Products
Rev. V5
MA4E2200 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Applications Section
MADS-002200
Frequency (GHz) vs. Output Voltage (V)
0.01
0.1
1
10
0.1
1
10
Frequency (GHz)
O
u
tp
u
tV
o
lt
ag
e
(
V
)
-20 dBm SN1
-10 dBm SN1
0 dBm SN1
+10 dBm SN1
MADS-002200
Input Pow er (dBm ) vs. Output Voltage (V)
0.01
0.1
1
10
-20
-15
-10
-5
0
5
10
Input Pow er (dBm )
O
u
tp
u
tV
o
lt
ag
e
(
V
)
1 GHz
5 GHz
10 GHz
The MADS-002200 in an SC-79 Package Style was evaluated in a detector circuit in which the
Schottky diode terminates a 50 Ohm transmission line on a duroid substrate. The SC-79 packaged
diode was attached to the terminal of a 3.5mm connector and the output voltage was measured
through a bias tee on a voltmeter. Matching was not attempted.
The voltage peak at 2 GHz is due to a resonance of the SC-79 package inductance with the diode junc-
tion capacitance. This condition results in higher RF voltage across the diode junction.
相关PDF资料 |
PDF描述 |
|---|---|
| MBR16100FCTP | 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MLL759P | 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MLL758AP | 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MBR8100P | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MASMLJ150CE3 | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2200D-287T | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2200E-1068T | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2200E1-1068T | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2501 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes |
| MA4E2501-1290 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes |
发布紧急采购，3分钟左右您将得到回复。