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参数资料
| 型号： | MA4E2514L-1116T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1116, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 98K |
| 代理商： | MA4E2514L-1116T |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
SURMOUNTTM Low and Medium Barrier Silicon
Schottky Diodes: Tee Pair
M/A-COM Products
Rev. V5
MA4E2514 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
Extremely Low Parasitic Capitance and Induc-
tance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100 % Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
Description
The MA4E2514 SURMOUNT
TM Diode Tee Series
are Silicon Low, and Medium Barrier Schottky De-
vices fabricated with the patented Heterolithic Mi-
crowave Integrated Circuit (HMIC) process. HMIC
Circuits consist of Silicon pedestals which form di-
odes or via conductors embedded in glass dielec-
tric, which acts as the low dispersion, low loss mi-
crostrip transmission medium. The combination of
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip.
The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multi-layer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0505” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
A
C
B
E
DD
Case Style 1116
DIM
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.0445
0.0465
1.130
1.180
B
0.0445
0.0465
1.130
1.180
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.0148
0.325
0.375
E
0.0128
0.0148
0.325
0.375
MILLIMETERS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2514L-1116W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| MA4E2514M | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| MA4E2514M-1116 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2514M-1116T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| MA4E2514M-1116W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
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