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参数资料
| 型号： | MA4E2514L-1116T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1116, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 98K |
| 代理商： | MA4E2514L-1116T |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
SURMOUNTTM Low and Medium Barrier Silicon
Schottky Diodes: Tee Pair
M/A-COM Products
Rev. V5
MA4E2514 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Electrical Specifications @ 25°C (Measured as Single Diodes) 1,2,3
Model Number
Type
Recommended
Freq. Range
Vf @ 1 mA
(mV)
Vb @ 10 uA
(V)
Ct @ 0 V
(pF)
Rt Slope Resistance
(Vf1– Vf2)/
(10.5 mA - 9.5 mA)
()
MA4E2514L
Low Barrier
DC - 18 GHz
330 Max
300 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
16 Typ
20 Max
MA4E2514M
Medium Barrier
DC - 18 GHz
470 Max
400 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
12 Typ
18 Max
Applications
The MA4E2514 Family of Surmount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power applica-
tions such as mixers, sub-harmonic mixers, detectors
and limiters.
The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes
with the corresponding Surmount diode, which can be
connected to a hard or soft substrate circuit with sol-
der.
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for individ-
ual components.
The top surface of the die has a
protective polyimide coating to minimize damage.
The rugged construction of these Surmount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry stan-
dard electrostatic discharge (ESD) control is required
at all times, due to the sensitive nature of Schottky
junctions. Bulk handling should insure that abrasion
and mechanical shock are minimized.
Die Bonding
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the bottom
surface of these devices, and are opposite the active
junction.
The devices are well suited for high tem-
perature solder attachment onto hard substrates.
Absolute Maximum Ratings 4
Parameter
Value
Operating Temperature
-40°C to +150°C
Storage Temperature
-40°C to +150°C
Forward Current
20 mA
Reverse Voltage
5 V
RF C.W. Incident Power
+ 20 dBm
RF & DC Dissipated Power
50 mW
Electrostatic Discharge
( ESD ) Classification
5
Class 0
Die Bonding
For Hard substrates, we recommend utilizing a vac-
uum tip and force of 60 to 100 grams applied uni-
formly to the top surface of the device, using a hot gas
bonder with equal heat applied across the bottom
mounting pads of the device. When soldering to soft
substrates, it is recommended to use a lead-tin inter-
face at the circuit board mounting pads. Position the
die so that its mounting pads are aligned with the cir-
cuit board mounting pads. Reflow the solder paste by
applying equal heat to the circuit at both die-mounting
pads.
The solder joint must not be made one at a
time, creating unequal heat flow and thermal stress.
Solder reflow should not be performed by causing
heat to flow through the top surface of the die. Since
the HMIC glass is transparent, the edges of the
mounting pads can be visually inspected through the
die after the die attach is completed.
4. Exceeding any of these values may result in permanent dam-
age.
5. Human Body Model
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance.
2. Max Forward Voltage Difference
Δ Vf @ 1 mA: 10 mV
3. Max Total Capacitance Difference
Δ Ct @ 0 V: 0.03 pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2514L-1116W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| MA4E2514M | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| MA4E2514M-1116 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2514M-1116T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| MA4E2514M-1116W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
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