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参数资料
| 型号： | MA4E2532L-1113W |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1113, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 102K |
| 代理商： | MA4E2532L-1113W |
2
SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
M/A-COM Products
Rev. V3
MA4E2532L-1113, MA4E2532M-1113
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Electrical Specifications @ 25°C (Measured as Single Diodes)
Model Number
Type
Recommended
Freq. Range
Vf @ 1 mA
(mV)
Δ Vf @ 1 mA
(mV)
Ct @ 0 V
(pF)
Rt Slope Resistance
(Vf1-Vf2) /
(10.5 mA - 9.5 mA)
()
MA4E2532L-1113
Low Barrier
DC - 18 GHz
330 Max.
300 Typ.
10 Max.
0.16 Max.
0.10 Typ.
16 Typ.
20 Max.
MA4E2532M-1113
Medium Barrier
DC - 18 GHz
470 Max.
440 Typ.
10 Max.
0.18 Max.
0.12 Typ.
10 Typ.
18 Max.
1. Rt is the dynamic slope resistance where Rt = Rs + Rj where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance.
Applications
The MA4E2532-1113 Series SURMOUNT
TM Low
and Medium Barrier Silicon Schottky Ring Quad
Diodes are recommended for use in microwave
circuits through Ku band frequencies for lower
power applications such as mixers, sub-harmonic
mixers, detectors and limiters. The HMIC construc-
tion facilitates the direct replacement of more frag-
ile beam lead diodes with the corresponding Sur-
mount diode, which can be connected to a hard or
soft substrate circuit with solder.
Handling
All semiconductor chips should be handled with
care to avoid damage or contamination from per-
spiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recom-
mended for individual components.
The top sur-
face of the die has a protective polyimide coating to
minimize damage.
The rugged construction of these Surmount de-
vices allows the use of standard handling and die
attach techniques. It is important to note that in-
dustry standard electrostatic discharge (ESD) con-
trol is required at all times, due to the sensitive na-
ture of Schottky junctions.
Bulk handling should
insure that abrasion and mechanical shock are
minimized.
Die Bonding
Die attach for these devices is made simple
through the use of surface mount die attach tech-
nology. Mounting pads are conveniently located on
the bottom surface of these devices, and are oppo-
site for the active junction. The devices are well
suited for high temperature solder attachment onto
hard substrates. 80Au/20Sn and Sn63/Pb36/Ag2
solders are acceptable for usage.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When solder-
ing to soft substrates it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must Not be made one at a time, creating un-
equal heat flow and thermal stress. Solder reflow
should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
die attach is completed.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2532M-1113 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2532M-1113T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2532M-1113W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2544 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series |
| MA4E2544L-1282 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
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