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参数资料
| 型号： | MA4E2532L-1113W |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1113, 4 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 102K |
| 代理商： | MA4E2532L-1113W |
3
SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
M/A-COM Products
Rev. V3
MA4E2532L-1113, MA4E2532M-1113
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Parameter
Value
Operating Temperature
-40°C to +150°C
Storage Temperature
-40°C to +150°C
Junction Temperature
+175°C
Forward Current
20 mA
Reverse Voltage (10 uA)
5 V
RC C.W. Incident Power
+20 dBm
RF & DC Dissipated Power
50 mW
Electrostatic Discharge
( ESD ) Classification
2
Class 0
Absolute Maximum Ratings 1
MA4E2532L-1113 Low Barrier SPICE PARAMETERS
Is
(nA)
Rs
()
N
Cj0
(pF)
M
Ik
(mA)
Cjpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
26
12.8
1.20
1.0 E-2
0.5
14
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2532M-1113 Medium Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
Rs
()
N
Cj0
(pF)
M
Ik
(mA)
Cpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
5 E-1
9.6
1.20
1.0 E-2
0.5
10
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
Spice Parameters (Per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020
0.013
0.020
0.013
Ordering Information
1. Exceeding any of these values may result in permanent damage.
Part Number
Packaging
MA4E2532L-1113W
Wafer on Frame
MA4E2532L-1113
Die in Carrier
MA4E2532L-1113T
Tape/Reel
MA4E2532M-1113W
Wafer on Frame
MA4E2532M-1113
Die in Carrier
MA4E2532M-1113T
Tape/Reel
2. Human Body Model
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2532M-1113 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2532M-1113T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2532M-1113W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2544 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series |
| MA4E2544L-1282 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
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