参数资料
型号: MA4GP030120
元件分类: PIN二极管
英文描述: 100 V, GALLIUM ARSENIDE, PIN DIODE
封装: ROHS COMPLIANT, CASE 120, 2 PIN
文件页数: 2/6页
文件大小: 327K
代理商: MA4GP030120
RoHS Compliant
V1
GaAs PIN Diode Chips
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
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Visit www.macom.com for additional data sheets and product
information.
GaAs Chip Specification @ TAMB = +25°C
Part Number
Max. Rev.
Volt.
1
VR < 10 A
VDC
Max. Cap.
1 MHz
Cj @ -10 V
pF
Max. Series Res.
2
1 GHz
RS @ 20 mA
Nominal Characteristics
Carrier Lifetime
TL @ IFOR = 10 mA
IREV = 6 mA
ηS
Switching Speed
3
7 GHz
ηS
MA4GP022-277
50
0.15
1.0
5
15
MA4GP030-277
100
0.06
2.0
10
25
Notes:
1.
VR ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10A.
2.
Chip is mounted into case style ODS 30 ceramic package.
3.
Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted switch
Case Style 277 (Chip)
Anode
A
B
C
B
Dimension
Mils
Millimeters
A
7 ± .5
.178 ± .013
B
11 ± 1
.279 ± .025
C
2.2 ± .3
.056 ± .008
Typical TTL Driver Circuit
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