参数资料
型号: MA4SPS422
元件分类: PIN二极管
英文描述: SILICON, PIN DIODE
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 1/7页
文件大小: 181K
代理商: MA4SPS422
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
SURMOUNTTM PIN Diodes
RoHS Compliant
MA4SPS421, MA4SPS422
M/A-COM Products
Rev. V6
MA4SPS42X Series
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
Surface Mount
No Wire Bonding Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
Higher Average and Peak Power Handling
RoHS Compliant
Description
This device is a Silicon-Glass PIN diode chip
fabricated
with
M/A-COM’s
patented
HMICTM
process. This device features two silicon pedestals
embedded in a low loss, low dispersion glass. The
diode is formed on the top of one pedestal and
connections to the backside of the device are
facilitated
by
making
the
pedestal
sidewalls
electrically
conductive.
Selective
backside
metallization is applied producing a surface mount
device.
This
vertical
topology
provides
for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection.
These
protective
coatings
prevent
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
These surmount devices are suitable for usage in
moderate incident power (10W C.W.) or higher
incident peak power (500W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.1 to 0.2nH, and excellent RC constant (0.45pS),
make the devices ideal for higher frequency switch
INCHES
MM
MIN.
MAX.
MIN.
MAX.
A
0.040
0.042
1.025
1.075
B
0.021
0.023
0.525
0.575
C
0.004
0.008
0.102
0.203
D
0.013
0.015
0.325
0.375
E
0.011
0.013
0.275
0.325
F
0.013
0.015
0.325
0.375
G
0.019
0.021
0.475
0.525
DIM
Parameter
Absolute Maximum
Forward Current
250mA
Reverse Voltage
-200V
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
Dissipated Power
( RF & DC )
1.8W
Mounting Temperature
+280°C for 30 seconds
Absolute Maximum Ratings @ TA = 25°C
(unless otherwise specified)
MA4SPS421
MA4SPS422
1. Backside metal: 0.1 M thick.
2. Yellow hatched areas indicate backside ohmic gold
contacts.
3. All devices have the same outline dimensions (A to G).
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