参数资料
型号: MA4SPS422
元件分类: PIN二极管
英文描述: SILICON, PIN DIODE
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 2/7页
文件大小: 181K
代理商: MA4SPS422
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
SURMOUNTTM PIN Diodes
RoHS Compliant
MA4SPS421, MA4SPS422
M/A-COM Products
Rev. V6
MA4SPS42X Series
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Electrical Specifications @ TA = +25°C
1. Total Capacitance, CT, is equivalent to the sum of Junction Capacitance and Parasitic Capacitance.
CT = CJ (Junction Capacitance) + CPAR (Parasitic Capacitance)
2. Series resistance RS is equivalent to the total diode resistance:
RS = RJ (Junction Capacitance Junction Resistance) + RO (Ohmic Resistance)
3
RS and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package.
.
4.
Steady-state RJL measured with die mounted in an ODS-186 package.
Parameter
Symbol
Conditions
Units
MA4SPS421
MA4SPS422
Typ.
Max.
Typ.
Max.
Capacitance
CT
0V, 1MHz 1
pF
0.130
0.175
0.340
0.500
Capacitance
CT
0V, 1GHz 1,3
pF
0.080
0.140
Capacitance
CT
- 40V, 1MHz 1
pF
0.090
0.125
0.180
0.300
Capacitance
CT
- 40V, 1GHz 1,3
pF
0.070
0.130
Resistance
RS
+10mA, 1GHz 2,3
6.200
3.100
Forward Voltage
VF
+10mA
V
0.900
0.950
0.840
0.900
Reverse Leakage
Current
IR
-200V
μA
|-10|
Input Third Order
Intercept Point
IIP3
F1 = 1000MHz
dBm
50
F2 = 1010MHz
Input Power = +10dBm
I bias = +10mA
Minority Carrier
Lifetime
TL
+10mA / -6mA
S
5
10
(50% - 90% V)
C.W. Thermal
Resistance
RJL
IH = 0.5A, IL = 10mA
4
°C/W
80
70
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