- 您现在的位置：买卖IC网 > PDF目录95875 > MA4T24335 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MA4T24335 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 86K |
| 代理商： | MA4T24335 |
Silicon Bipolar High f
T Low Noise Medium Power 12 Volt Transistor
MA4T243 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
Features
Low Phase Noise Oscillator Transistor
200 mW Driver Amplifier Transistor
Operation to 8 GHz
Available as Chip
Available in Hermetic Surface Mount Packages
Description
M/A-COM’s MA4T24300 series of high f
T NPN medium power
bipolar transistors is designed for usage in oscillators to 8 GHz
and for moderate power driver amplifiers through 3 GHz with
noise figure below 4 dB.
This industry standard transistor is available as a chip for hybrid
oscillator circuits or in hermetic ceramic packages for military
usage.
The chip and hermetic packages may be screened to
JANTXV equivalent levels.
The MA4T243 transistors utilize sub-micron photolithography
and oxidation techniques to minimize parasitic capacitances. It
also reduces shot noise enabling improved low noise characteris-
tics. These transistors use a M/A-COM proprietary high tempera-
ture refractory barrier/gold metalization process. The MA4T243
transistor is emitter ballasted using ion implanted polysilicon
resistors to prevent emitter current hot spots at high current
operation.
Case Style
Absolute Maximum Ratings @ 25°C
Silicon Bipolar High f
T Low Noise
Medium Power 12 Volt Transistors
MA4T243 Series
Chip
Micro-X
Parameter
Symbol
Unit
MA4T24300
Chip
MA4T24335
Micro-X
Collector-Base Voltage
1
V
CBO
Volts
25
Collector-Emitter Voltage
1
V
CEO
Volts
12
Emitter-Base Voltage
1
V
EBO
Volts
1.5
Collector Current
1
I
C
mA
110
Junction Temperature
T
j
°C
200
Storage Temperature
T
STG
°C
-65 to +200
Power Dissipation
1,3
P
T
mW
1000
400
Operating Temperature
2
T
CP
°C
150
1. At 25°C case temperature (packaged transistors) or 25°C mounting surface temperature (chip transistors).
2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.
3. The thermal resistance of the MA4T24300 junction/case is 50°C/watt nominal.
相关PDF资料 |
PDF描述 |
|---|---|
| MA4T324300 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324335 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333TR3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333RT3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
发布紧急采购，3分钟左右您将得到回复。