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参数资料
| 型号： | MA4T24335 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 4/8页 |
| 文件大小： | 86K |
| 代理商： | MA4T24335 |
Silicon Bipolar High f
T Low Noise Medium Power 12 Volt Transistor
MA4T243 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
0
100
200
300
400
500
600
700
800
900
1000
- 2 5
0
25
50
75
100
125
150
175
200
A M BI EN T TEM P ( C )
TOTAL
POWER
DISSIPATION
(mW)
POWER DERATING CURVES
Typical Performance Curves
0
2
4
6
8
10
12
14
16
1
10
F R E Q UE NCY ( G H z )
GAIN
(dB)
G T U ( M AX )
|S 21 |2
0. 4
0. 5
0. 6
0. 7
0. 8
0. 9
1
1 0
100
C O LLEC T O R - BA S E V O LTA G E ( V o l t s )
COLLECTOR-BASE
CAPACITANCE
(pF)
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MA4T24335)
NOMINAL GAIN vs FREQUENCY at V
CE = 12 VOLTS
and I
C = 20 mA (MA4T24335)
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
0
2
4
6
8
10
12
14
C O LLEC T O R EM I TTER V O L T A G E ( V o l t s )
COLLECTOR
CURRENT
(mA)
DC SAFE OPERATING RANGE AT 25°c
MA4T24300 CHIP ON
25°C HEAT SINK
MA4T24335 MICRO-X
MA4T24300 CHIP ON
25°C HEAT SINK
MA4T24335 MICRO-X
50
60
70
80
90
100
110
120
0
2 04 06 08 0
1 0 0
C O LLEC T O R CURRE NT ( m A)
DC
CURRENT
GAIN
NOMINAL DC CURRENT GAIN (h
FE) vs
COLLECTOR CURRENT at V
CE = 8
VOLTS (MA4T24335)
0
2
4
6
8
10
12
14
16
18
1
1 0
100
C O LLEC T O R CURRE NT ( m A)
NOISE
ASSOCIATD
FIGURE(dB)
GAIN
(dB)
NO I S E F I G URE
AS S O CI AT E D G A I N
NOMINAL NOISE FIGURE and ASSOCIATED
GAIN vs COLLECTOR CURRENT at 1 GHz and
V
CE = 12 VOLTS (MA4T24335)
0
2
4
6
8
10
12
14
16
1
1 0
100
C O LLEC T O R CURRE NT ( m A)
GAIN
(dB)
G T U ( M AX )
|S 21E |2
MA G
NOMINAL GAIN vs COLLECTOR CURRENT at
F = 2 GHz and V
CE = 12 VOLTS (MA4T24335)
1
2
3
4
5
6
7
8
1
1 0
100
C O LLEC T O R CURRE NT ( m A)
GAIN
BANDWIDTH
PRODUCT
in
GHz
8 V O LTS
12 V O L T S
NOMINAL GAIN BANDWIDTH PRODUCT (f
T) vs
COLLECTOR CURRENT at V
CE = 8 and 12 VOLTS
(MA4T24335)
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| MA4T324300 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| MA4T324333TR3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
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