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参数资料
| 型号： | MA4T631033 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 73K |
| 代理商： | MA4T631033 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
1
This Preliminary Specifications Data Sheet Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
V 2.00
3 Volt, Low Noise High f
T
Silicon Transistor
MA4T6310 Series
Features
q
1.5 dB Noise Figure at 0.5 mA
q
13 dB Gain at 1 GHz
q
14 GHz f
T
q
Low Cost Plastic Package
q
Available on Tape and Reel
Description
The MA4T6310 series of low current, high f
T silicon NPN
bipolar transistors provides low noise figure at a bias of 3
volts and small collector current. These inexpensive sur-
face mount NPN transistors are well suited for usage in
portable battery operated wireless systems from 500 MHz
through 2.5 GHz where low noise figure at small current
is important.
The MA4T6310 transistor series has high f
T and low noise
when operated with 0.3 to 2.0 milliamperes current, and
3 volt bias. The associated gain is approximately 14 dB at
1 GHz with 1 mA collector current. The MA4T6310 also
has low phase noise while operating in a low power 3-5
volt battery operated VCO in the frequency range of 0.5
to 3 GHz.
The MA4T6310 transistor is useful for wireless communi-
cation systems from VHF through L-band where good
noise figure and high gain at 3 volt bias and low DC cur-
rent are key system requirements. Suggested uses include,
900 MHz portable phones, pagers, PCN subscriber phones
and 2.4 GHz cordless and cellular hand held receivers.
The MA4T6310 is available as a chip (MA4T631000), in the
SOT-23 (MA4T631033), the SOT-143 (MA4T631039), and
in the Micro-X (MA4T631035) packages. Surface mount
packages are available on tape and reel.
SOT-143
Chip
SOT-23
Micro-X
Preliminary Specifications
相关PDF资料 |
PDF描述 |
|---|---|
| MA4T631000 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T631035 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T632535 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T632539RT7 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T632539TR7 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
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