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参数资料
| 型号： | MA4T631033 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 6/8页 |
| 文件大小： | 73K |
| 代理商： | MA4T631033 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
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Fax +44 (1344) 300 020
6
This Preliminary Specifications Data Sheet Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
V 2.00
3 Volt, Low Noise High f
T Silicon Transistor
MA4T6310 Series
P
1dB
(dBm)
0
3
3.5
0
25
50
75
100
125
150
175
2.5
2
1.5
1
0.5
Typical Performance Curves (Cont’d)
GAIN BANDWIDTH PRODUCT (f
T) VS
COLLECTOR CURRENT AT V
CE = 3 V
(MA4T631035)
DC CURRENT GAIN (h
FE) vs
COLLECTOR CURRENT AT V
CE = 3 V
(MA4T631035)
NOISE FIGURE AND ASSOCIATED
GAIN AT 1 GHz AND V
CE = 3 V
vs COLLECTOR CURRENT
(MA4T631035)
NOMINAL OUTPUT POWER AT THE
1 dB COMPRESSION POINT vs
COLLECTOR CURRENT V
CE = 3 V
(MA4T631035)
COLLECTOR CURRENT (mA)
GAIN
BAND
WIDTH
PR
ODUCT
(GHz)
COLLECTOR CURRENT (mA)
DC
CURRENT
GAIN
COLLECTOR CURRENT (mA)
NOISE
FIGURE
(dB)
ASSOCIA
TED
GAIN
(dB)
COLLECTOR CURRENT (mA)
1000
100
10
0
10
0
f=900 MHz
f=2 GHz
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
15
14
13
12
11
10
9
8
0.1
1
10
6.5
7
7.5
8
8.5
9
9.5
10
ASSOCIATED GAIN
NOISE FIGURE
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