Low Operating Voltage, High F
T
Bipolar Microwave Transistors
MA4T6365
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specications Subject to Change Without Notice.
Features
q
Designed for Battery Operation
q
f
T to 10 GHz
q
Low Voltage Oscillator and Amplier
q
Low Phase Noise and Noise Figure
q
Hermetic and Surface Mount Packages and
Chips Available
q
Can be Screened to JANTX, JANTXV Equivalent Levels
Description
The MA4T6365 family of low voltage, high gain band-
width silicon NPN bipolar transistors provides low noise
gure and high gain at low bias voltages. These transis-
tors are especially attractive for low operating voltage
low noise ampliers or driver ampliers at frequencies to
4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
The MA4T6365 family was designed to have low noise
gure at operating voltages as low as 3 volts. These tran-
sistors also exhibit low phase noise in VCOs operating at
5 volts or less.
Because this transistor family was specically designed to
operate from low bias voltage, it has superior phase
noise in comparison to similar current bipolar transistors
with higher collector breakdown voltage when operating
under the same low voltage conditions.
The MA4T6365 series transistors are available in hermetic
Micro-X packages, the SOT-23, the SOT-143, and in chip
form (MA4T636500). Other stripline and hermetic pack-
ages are available. The chip and hermetic packages can
be screened to JANTX, JANTXV equivalent levels. The
plastic parts can be supplied on tape and reel.
All of M/A-COM's silicon bipolar transistor families use
silicon dioxide and silicon nitride passivation to assure
low 1/F noise for amplier and oscillator applications.
Chip
Micro-X
SOT-143
SOT-23
Case Styles