参数资料
型号: MA4T636539
元件分类: 小信号晶体管
英文描述: X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 5/8页
文件大小: 101K
代理商: MA4T636539
Low Operating Voltage, High f
T Bipolar Microwave Transistors
MA4T6365 Series
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
5
Specications Subject to Change Without Notice.
V2.00
MA4T6365
Typical Performance Curves
POWER DERATING CURVES
NOMINAL COLLECTOR-BASE CAPACITANCE (C
OB)
COLLECTOR-BASE VOLTAGE (MA4T636535)
NOMINAL GAIN vs FREQUENCY AT
V
CE = 3 VOLTS, IC = 10 mA (MA4T6356535)
NOMINAL GAIN VS COLLECTOR CURRENT AT
F = 1.0 GHz, V
CE = 3 VOLTS (MA4T636535)
AMBIENT TEMP (7C)
FREQUENCY (GHz)
COLLECTOR CURRENT (mA)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
015
10
5
COLLECT
OR-BASE
CAP
ACIANCE
(C
CB
)(pF)
COLLECTOR-BASE VOLTAGE (VCB) (VOLTS)
24
20
16
12
8
4
0
110
GAIN
(dB)
2
5
S21E 2
GTU (MAX)
MA4T636500 Chip on
Infinite Heat Sink
MA4T636533 in
SOT 23 Package
0
25
50
75 100 125 150 175
500
450
400
350
300
250
200
150
100
50
0
TOTAL
POWER
DISSIPATION
(mW)
MA4T636535
in Micro X
Package
MAG
GTU(MAX)
1
10
100
20
19
18
17
16
15
14
13
12
11
GAIN
(dB)
S21E 2
COLLECTOR-BASE
CAPACITANCE
(pF)
COLLECTOR-BASE VOLTAGE (VOLTS)
相关PDF资料
PDF描述
MA4T636500 X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MA4T636535 X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MA4T638033 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MA4T638033RT7 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MA4T638039TR7 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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