- 您现在的位置：买卖IC网 > PDF目录95876 > MA4T64535 X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MA4T64535 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 5/8页 |
| 文件大小： | 111K |
| 代理商： | MA4T64535 |
Silicon Bipolar High f
T Low Noise Microwave Transistor
MA4T645 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
Typical Performance Curves
Nominal Collector-Base Capacitance vs
Collector-Base Voltage (MA4T64535)
Nominal Power Derating Curves
0
50
10 0
15 0
20 0
25 0
30 0
35 0
40 0
45 0
50 0
0
2 5
5 0
7 5
1 00
1 2 5
1 50
1 7 5
A M B I EN T TEM P ( C )
TOTAL
POWER
DISSIPATION
(mW)
MA4T64533 (SOT-23)
MA4T64500 (Chip)
Infinite Heat Sink
MA4T64535 (MICRO-X)
0. 2
0. 25
0. 3
0. 35
0. 4
0. 45
0. 5
0. 55
0. 6
11 0
1 0 0
C O LLEC TO R - B A S E V O LTA G E ( V
CB ) (V o l ts )
COLLECTOR-BASE
CAPACITANCE
(C
)(pF)
Nominal Gain vs Frequency at V
CE = 8 Volts
and I
C = 10 mA (MA4T64535)
Nominal Gain vs Collector Current at F = 1.5 GHz and
V
CE = 8 Volts (MA4T64535)
0
4
8
12
16
20
24
1
10
F R EQ UENC Y ( G H z )
GAIN
(dB)
G TU ( M AX )
|S
21E |2
2
5
6
7
8
9
10
11
12
13
14
15
11 0
1 0 0
C O L L EC TO R C U RRENT ( m A)
GAIN
(dB)
GT U ( M A X )
|S
21E |2
MA G
Nominal Gain Bandwidth Product vs Collector
Current (MA4T64535)
Nominal DC Current Gain vs Collector Current at
V
CE = 8 Volts (MA4T64535)
2
20
11 0
1 0 0
C O L L EC TO R C U RRENT ( m A)
GAIN
BANDWIDTH
PRODUCT
(f
)
(GHz)
10
10 0
10 00
11 0
1 0 0
C O L L EC TO R C URRENT ( m A)
DC
CURRENT
GAIN
(h
)
Nominal Noise Figure and Associated
Gain vs Fequency at V
CE = 8 Volts and
Collector Current = 7 mA (MA4T64535)
Nominal Noise Figure and Associated Gain vs
Collector Current at F = 1 GHz and V
CE = 8 Volts
(MA4T64535)
1
10
10 0
0. 1
1
10
F R EQ UENC Y ( G H z )
NOISE
ASSOCIATED
FIGURE(dB)
GAIN
(dB)
NO I S E F I G U R E
A SSO C I A TED G A I N
1
3
5
7
9
11
13
0
5
10
15
20
C O L L EC TO R C U RRENT ( m A)
NOISE
ASSOCIATED
FIGURE(dB)
GAIN
(dB)
50 O H M N o i s e F i g u r e
As s o c i a t e d G a i n
O p ti m u m M a tc h fo r N o i s e F i g u r e
相关PDF资料 |
PDF描述 |
|---|---|
| MA4T64500 | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T64533 | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4X1930G | SILICON, VHF BAND, MIXER DIODE |
| MA4X7260G | MIXER DIODE |
| MA4Z1590G | SILICON, VHF BAND, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
发布紧急采购，3分钟左右您将得到回复。