Silicon Bipolar High f
T Low Noise Microwave Transistor
MA4T645 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
Features
f
T to 9 GHz
Low Noise Figure
High Associated Gain
Hermetic and Surface Mount Packages Available
Can be Screened to JANTX, JANTXV Equivalent Levels
Industry Standard
Tape and Reel Packaging Available
Description
The MA4T645 family of high gain-bandwidth, small signal sili-
con bipolar transistors is well suited for use in amplifiers to
approximately 4 GHz, and in oscillators to approximately 10
GHz. These industry standard transistors feature low noise figure
at high collector current, which produces very good associated
gain and wide dynamic range. The MA4T645 series transistors
are available in a hermetic microstrip package (MA4T64535), in
the plastic SOT-23 package (MA4T64533), in chip form
(MA4T64500), and in the SOT-143 package (MA4T64539). The
MA4T645 series is available in other plastic and hermetic pack-
ages as well. The chip and hermetically packaged transistors can
be screened to a JANTXV equivalent level.
Applications
The MA4T645 family of bipolar NPN transistors can be used for
low noise, high associated gain, large dynamic range amplifiers
up to approximately 4 GHz. These transistors can also be used as
preamplifier or driver stages in the same frequency range.
The MA4T645 family of bipolar NPN transistors can also be used
for oscillators or VCO’s up to approximately 10 GHz.
The
passivation consists of silicon dioxide, commonly known as ther-
mal oxide, and silicon nitride to produce very low 1/f noise in
both amplifiers and oscillators.
Case Style
Silicon Bipolar High f
T Low Noise
Microwave Transistors
MA4T645 Series
SOT-23
SOT-143
Chip
Micro-X