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参数资料
| 型号： | MA4T64533 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/8页 |
| 文件大小： | 111K |
| 代理商： | MA4T64533 |
Silicon Bipolar High f
T Low Noise Microwave Transistor
MA4T645 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
Absolute Maximum Ratings
MA4T645 Series
Collector-Base Voltage
V
CBO
25 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
1.5 V
Collector Current
I
C
65 mA
Junction Operating Tem-
perature
T
j
200
°C
Storage Temperature
Chip or Ceramic Packages
-65
°C to +200°C
Plastic Packages
-65
°C to +125°C
Total Power Dissipation at 25
°C
Derate Linearly to:
+150
°C Chip
400 mW
+125
°C Plastic Package (SOT-23, SOT-143)
200 mW
+150
°C Ceramic Package (Micro-X)
300 mW
Electrical Specifications @ 25°C
MA4T645 Series
Parameter of Test
Condition
Symbol
Units
MA4T64500
Chip
MA4T64533
SOT-23
MA4T64535
Micro-X
Gain Bandwidth Product
V
CE = 8 volts
f
T
GHz
10 typ
8 typ
9 typ
I
C = 20 mA
Insertion Power Gain
V
CE = 8 volts
|S
21E|
2
dB
I
C = 20 mA
f = 1 GHz
18 typ
15 typ
17 typ
f = 2 GHz
11 min
9 min
10 min
f = 4 GHz
7 typ
6.5 typ
Noise Figure
V
CE = 8 volts
NF
dB
I
C = 7 mA
f = 1 GHz
1.7 max
f = 2 GHz
2.0 typ
2.5 typ
2.0 typ
Unilateral Gain
V
CE = 8 volts
GTU (max)
dB
I
C = 7 mA
f = 1 GHz
18 typ
16 typ
17 typ
f = 2 GHz
11 typ
10 typ
11 typ
Maximum Available Gain
V
CE = 8 volts
MAG
dB
I
C = 10 mA
f = 2 GHz
14 typ
13 typ
14 typ
f = 4 GHz
12 typ
10 typ
11.5 typ
Power Out at 1 dB
V
CE = 8 volts
P
1dB
dBm
Compression
I
C = 10 mA
f = 1 GHz
16 typ
15 typ
16 typ
f = 4 GHz
11 typ
10 typ
11 typ
Note: The electrical characteristics of the MA4T64539 (SOT-143) are very similar to those of the MA4T64533 (SOT-23).
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