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参数资料
| 型号： | MA4T64533 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 7/8页 |
| 文件大小： | 111K |
| 代理商： | MA4T64533 |
Silicon Bipolar High f
T Low Noise Microwave Transistor
MA4T645 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
MA4T64500
Case Styles (Cont’d)
MA4T64500 (Case Style 1138)
BASE
EMITTER
D
A
CB
E
DIM.
INCHES
MILLIMETERS
A
0.013
0.325
B
0.013
0.325
C
0.004
0.110
D
0.0005
0.013
E (Dia.)
0.0012
0.030
F (chip thickness)
0.0045
0.114
G
J
E
K
A
H
M
C
F
B
L
P
N
C olle c tor
E m itte r
Ba se
D
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.044
1.10
B
0.004
0.10
C
0.040
1.00
D
0.013
0.020
0.35
0.50
E
0.030
0.035
0.75
0.90
F
0.003
0.006
0.08
0.15
G
0.110
0.119
2.80
3.00
H
0.047
0.056
1.20
1.40
J
0.075 typical
1.90 typical
K
0.040 typical
1.70 typical
L
0.103
2.60
M
0.024
0.60
DIM.
GRADIENT
N
10
° max. 1
Note:
P
2
° . . . 30°
1. Applicable on all sides
MA4T64539 (SOT-143)
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