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参数资料
| 型号： | MA4T64533 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 6/8页 |
| 文件大小： | 111K |
| 代理商： | MA4T64533 |
Silicon Bipolar High f
T Low Noise Microwave Transistor
MA4T645 Series
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V4.00
Typical Performance Curves (Cont’d)
Nominal Output Power at the 1 dB Compression Point
vs Collector Current at F = 1 and 4 GHz, V
CE = 8 Volts
(MA4T64535)
6
8
10
12
14
16
18
20
22
24
01 0
2 0
3 0
4 0
C O L L EC TO R C URRENT ( m A)
P
@
1
dB
(dBm)
P
1d B a t 4
GHz
P
1d B
a t 1 GHz
MA4T64533
Case Styles
MA4T64533 (SOT-23)
F
D
H
J
A
G
L
C
E
B
K
N
M
C o llect o r
E m itte r
Ba s e
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.044
1.12
B
0.004
0.10
C
0.040
1.00
D
0.013
0.020
0.35
0.50
E
0.003
0.006
0.08
0.15
F
0.110
0.119
2.80
3.00
G
0.047
0.056
1.20
1.40
H
0.037 typical
0.95 typical
J
0.075 typical
1.90 typical
K
0.103
2.60
L
0.024
0.60
DIM.
GRADIENT
M
10
° max. 1
Note:
N
2
° . . . 30°
1. Applicable on all sides
Collector
Emitter
B
E
F
4 PLCS.
C
G
Base
H
Emitter
D
A
MA4T64539
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.092
0.108
2.34
2.74
B
0.079
0.087
2.01
2.21
C
0.070
1.78
D
0.019
0.025
0.48
0.64
E
0.018
0.022
0.46
0.56
F0.150
3.81
G
0.003
0.006
0.08
0.15
H
45
°
45
°
MA4T64539 (Micro-X)
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