
MA742
Silicon epitaxial planer type
For the switching circuit
s Features
q S-Mini type package of MA716 (2-pin series connection)
q Low forward rise voltage VF, optimum for low-voltage rectification
q Fast reverse recovery time trr, optimum for high-frequency rectifica-
tion
s Absolute Maximum Ratings (Ta= 25C)
Unit : mm
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage
from the equipment used.
2. Rated input/output frequency : 2000MHz
3. * trr measuring circuit
s Marking
Unit
A
V
pF
ns
%
Condition
VR = 30V
IF =1mA
IF = 30mA
VR =1V, f=1MHz
IF = IR=10mA
Irr=1mA, RL=100
Vin= 3V(peak), f= 30MHz
RL= 3.9k
, CL=10pF
Symbol
IR
VF1
VF2
Ct
trr*
η
s Electrical Characteristics (Ta= 25C)
Unit
V
mA
C
s Internal Connection
* Use value per chip
Rating
30
20*
150
110*
125
– 55 to + 125
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Symbol
VR
VRM
IF
IFM
Tj
Tstg
Single
Double
Single
Double
Schottky Barrier Diodes (SBD)
MA111
A
Bias Insertion
Unit N-50BU
90%
Pulse Generator
PG-10N
Rs=50
W.F.Analyzer
SAS-8130
Ri=50
tp=2
s
tr=0.35ns
δ=0.05
IF=10mA
IR=10mA
RL=100
10%
Input Pulse
Output Pulse
Irr=1mA
tr
tp
trr
VR
IF
t
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
min
typ
1.5
1
65
max
1
0.4
1
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-70 Flat S-Mini Type Package (3-pin)
1
3
2
M1U
1.25
±0.1
1.3
±0.1
2.0
±0.2
0.9
±0.1
0.65
0.425
0.3
+0.1
–0
2.1
±0.1
0.15
+0.1
–0.05
1
2
3