- 您现在的位置：买卖IC网 > PDF目录383307 > MA9264 (Dynex Semiconductor Ltd.) Radiation Hard 8192x8 Bit Static RAM PDF资料下载
参数资料
| 型号： | MA9264 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation Hard 8192x8 Bit Static RAM |
| 中文描述： | 辐射硬8192x8位静态RAM |
| 文件页数： | 4/15页 |
| 文件大小： | 240K |
| 代理商： | MA9264 |
MA9264
4/15
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
to 3.0V (TTL) and V
to 4.0V (CMOS).
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times
≤
5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at
±
500mV from steady state.
6. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
= -55
°
C to +125
°
C with V
DD
= 5V
±
10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25
°
C with V
DD
= 5V
±
10%. GROUP A SUBGROUPS 9, 10, 11.
MAX9264X70
Min
MAX9264X95
Min
Symbol
Parameter
Max
Max
Units
T
AVAVR
T
AVQV
T
EHQV
T
SLQV
T
EHQX
(5,6)
T
SLQX
(5,6)
T
ELQZ
(5,6)
T
SHQZ
(5,6)
T
AXQX
T
GLQV
T
GLQX
(5,6)
T
GHQZ
(5,6)
Read Cycle Time
70
-
95
-
ns
Address Access Time
-
65
-
90
ns
Chip Select Access Time
-
70
-
95
ns
Chip Enable Access Time
-
70
-
95
ns
Chip Selection to Output in Low Z
15
-
15
-
ns
Chip Enable to Output in Low Z
15
-
15
-
ns
Chip Deselection to Output in High Z
0
20
0
20
ns
Chip Disable to Output in High Z
0
20
0
20
ns
Output Hold from Address Change
30
-
40
-
ns
Output Enable Access Time
-
25
-
30
ns
Output Enable to Output in Low Z
15
-
15
-
ns
Output Enable to Output in High Z
0
20
0
20
ns
Figure 6: Read Cycle AC Electrical Characteristics
MAX9264X70
Min
MAX9264X95
Min
Symbol
Parameter
Max
Max
Units
T
AVAVW
T
EHWH
T
SLWH
T
AVWH
T
AVWL
T
WLWH
T
WHAV
T
WLQZ
(5,6)
T
DVWH
T
WHDX
T
WHQX
(5,6)
Write Cycle Tlme
55
-
60
-
ns
Chip Selection to End of Write
50
-
60
-
ns
Chip Enable to End of Write
50
-
60
-
ns
Address Valid to End of Write
50
-
55
-
ns
Address Set Up Time
0
-
0
-
ns
Write Pulse Width
40
-
45
-
ns
Write Recovery Time
0
-
0
-
ns
Wnte to Output in High Z
0
20
0
20
ns
Data to Write Time Overlap
25
-
30
-
ns
Data Hold from Write
0
-
0
-
ns
Output Active from End to Write
0
20
0
20
ns
Figure 7: Write Cycle AC Electrical Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| MAC15S | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC15SDG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC15SMG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC15SNG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC8S | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA930.W.A.LBICGJ.005 | 功能描述:MODULE ANT GPS LTE SMA MALE 制造商:taoglas limited 系列:Guardian 包装:散装 零件状态:停產 频率组:宽带 频率（中心/带）:829MHz，1.575GHz，1.94GHz，2.59GHz，3.45GHz 频率范围:698MHz ~ 960MHz，1.559GHz ~1.607GHz，1.71GHz ~ 2.17GHz，2.49GHz ~ 2.69GHz，3.3GHz ~ 3.6GHz 天线类型:模块 频带数:5 VSWR:2 回波损耗:-10dB 增益:7dBi 特性:LNA，滤波器 端接:电缆（1M） - SMA 公头 侵入防护:IP67 安装类型:胶合剂 高度（最大值）:0.787"（20.00mm） 应用:Beidou，GLONASS，GPS，GNSS，GSM，LTE，UMTS，Wi-Fi 标准包装:1 |
| MA931.A.LBICGH.001 | 功能描述:MODULE ANT GPS LTE WIFI SMA MALE 制造商:taoglas limited 系列:Guardian 包装:散装 零件状态:在售 频率组:宽带 频率（中心/带）:829MHz，1.575GHz，1.94GHz，2.4GHz，2.59GHz，3.45GHz，5.8GHz 频率范围:698MHz ~ 960MHz，1.575GHz，1.71GHz ~ 2.17GHz，2.4GHz ~ 2.69GHz，3.3GHz ~ 3.6GHz，5.8GHz 天线类型:模块 频带数:7 VSWR:3 回波损耗:-10dB 增益:28dBi 特性:LNA，滤波器 端接:电缆（1M） - SMA 公头 侵入防护:IP67 安装类型:胶合剂 高度（最大值）:0.787"（20.00mm） 应用:Beidou，GLONASS，GPS，GNSS，GSM，LTE，UMTS，Wi-Fi 标准包装:1 |
| MA9420010 | 制造商:Deltron 功能描述:HOLE CUTTER 20MM DIA H |
| MA9420020 | 制造商:Deltron 功能描述:HOLE CUTTER 22.5MM DIA H |
| MA9420040 | 制造商:Deltron 功能描述:HOLE CUTTER 27.5MM DIA H |
发布紧急采购，3分钟左右您将得到回复。