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| 型号： | MADP-000402-12530P |
| 元件分类： | PIN二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/7页 |
| 文件大小： | 151K |
| 代理商： | MADP-000402-12530P |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
SURMOUNTTM PIN Diode
RoHS Compliant
M/A-COM Products
Rev. V5
MA4SPS402
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
Surface Mount
No Wire Bonding Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
Higher Average and Peak Power Handling
RoHS Compliant
Description
This device is a Silicon-Glass PIN diode chip
fabricated
with
M/A-COM’s
patented
HMICTM
process. This device features two silicon pedestals
embedded in a low loss, low dispersion glass. The
diode is formed on the top of one pedestal and
connections to the backside of the device are
facilitated by making the pedestal sidewalls
electrically
conductive.
Selective
backside
metallization is applied producing a surface mount
device. This vertical conic topology provides for
exceptional heat transfer from the active area. The
topside is fully encapsulated with silicon nitride and
has an additional polymer layer for scratch and
impact protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
These surmount devices are suitable for usage in
moderate incident power (5W C.W.) or higher
incident peak power (50W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.45nH, and excellent RC constant (0.23pS), make
the devices ideal for higher frequency switch
elements
compared
to
their
plastic
device
counterparts.
Parameter
Absolute Maximum
Forward Current
250mA
Reverse Voltage
| -100V |
Operating Temperature
-55°C to +125°C
Storage Temperature
-55 °C to +150°C
Junction Temperature
+175°C
Dissipated Power
( RF & DC )
1W
Mounting Temperature
+260°C for 30 seconds
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
MA4SPS402
1. Backside metal: 0.1 M thick.
2. Yellow hatched areas indicate backside ohmic gold
DIM
INCHES
MM
Min.
Max.
Min.
Max.
A
0.046 0.051
1.170
1.290
B
0.017 0.021
0.432
0.533
C
0.004 0.006
0.102
0.203
D
0.015 0.017
0.381
0.432
E
0.014 0.016
0.356
0.406
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