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参数资料
| 型号： | MAPLST1920-030WF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 251K |
| 代理商： | MAPLST1920-030WF |
RF Power Field Effect Transistor
LDMOS, 1900 — 2000 MHz, 30W, 26V
Designed for GSM and EDGE base station
applications in the 1.9 to 2.0 GHz Frequency
Band. Suitable for FM, TDMA, CDMA, and
multi-carrier amplifier applications. Specified
for GSM 1910-1990 MHz.
30W CW Output Power at P1dB (CW)
12dB Minimum Gain at P1dB
45% Drain Efficiency at P1dB
10:1 VSWR Ruggedness (CW @ 30W,
26V, 1990MHz)
Internal input and output matching
MAPLST1920-030WF
Package Style
2/18/03
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
VDSS
65
Vdc
Gate—Source Voltage
VGS
20
Vdc
Drain Current — Continuous
ID
10
Adc
Total Power Dissipation @ TC = 25 °C
PD
97
W
Storage Temperature
TSTG
-40 to +150
°C
Junction Temperature
TJ
+200
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
1.8
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
MAPLST1920-030WF
Features
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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