| 型号: | MAPLST2122-030CF |
| 元件分类: | 功率晶体管 |
| 英文描述: | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数: | 1/5页 |
| 文件大小: | 161K |
| 代理商: | MAPLST2122-030CF |

相关PDF资料 |
PDF描述 |
|---|---|
| MAPLST2122-090CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPR-000912-500S00 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPR-001011-850S00 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPR-001090-350S00 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPR-002729-170M00 | S BAND, Si, NPN, RF POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MAPM-020512-010C00_2 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00 |
| MAPM-020512-040C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:40dB VSWR:3:5 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |