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参数资料
| 型号： | MAPLST2122-030CF |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/5页 |
| 文件大小： | 161K |
| 代理商： | MAPLST2122-030CF |
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
4
VDD = 28, f = 2.17GHz,
IDQ = 350mA
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
26
28
30
32
34
36
POUT (dBm) avg.
Gain
(dB)
0
5
10
15
20
Efficiency
(%)
VDD = 28, f = 2.17GHz,
IDQ = 350mA
-65
-60
-55
-50
-45
-40
-35
-30
25 26 27 28 29 30 31 32 33 34 35 36 37
POUT (dBm) avg.
ACPR
(dBc)
Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power
Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MAPM-020512-010C00_2 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00 |
| MAPM-020512-040C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:40dB VSWR:3:5 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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