参数资料
型号: MAX13256ATB+T
厂商: Maxim Integrated Products
文件页数: 2/17页
文件大小: 0K
描述: IC TRANSFORMER HBRIDGE 10TDFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1
类型: 半桥
输入类型: 非反相
输出数: 2
电流 - 输出 / 通道: 300mA
电流 - 峰值输出: 可调式/可编程
电源电压: 8 V ~ 36 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-WFDFN 裸露焊盘
供应商设备封装: 10-TDFN-EP(3x3)
包装: 标准包装
其它名称: MAX13256ATB+TDKR
MAX13256
36V H-Bridge Transformer
Driver for Isolated Supplies
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V DD , FAULT ...........................................................-0.3V to +40V
ST1, ST2 ................................................... -0.3V to (V DD + 0.3V)
CLK, ITH, EN ...........................................................-0.3V to +6V
FAULT Continuous Current ............................................. Q 50mA
ST1, ST2 Continuous Current ........................................ Q 850mA
Continuous Power Dissipation (T A = +70 N C)
TDFN (Four-Layer Board)
TDFN (Single-Layer Board)
(derate 18.5mW/ N C above +70 N C) .........................1481.5mW
Operating Temperature Range ........................ -40 N C to +125 N C
Junction Temperature .....................................................+150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s) ...............................+300 N C
Soldering Temperature (reflow) ......................................+260 N C
(derate 24.4mW/ N C above +70 N C) .........................1951.2mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN (Four-Layer Board)
Junction-to-Ambient Thermal Resistance ( B JA ) ..........41 N C/W
Junction-to-Case Thermal Resistance ( B JC ) .................9 N C/W
TDFN (Single-Layer Board)
Junction-to-Ambient Thermal Resistance ( B JA ) ..........54 N C/W
Junction-to-Case Thermal Resistance ( B JC ) .................9 N C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7. For detailed
information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = 8V to 36V, V EN = 0V, T A = -40 N C to +125 N C, unless otherwise noted. Typical values are at T A = +25 N C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Supply Voltage Range
Supply Current
Disable Supply Current
Driver Output Resistance
V DD
I DD
I DIS
R OH
R OL
(Note 3)
V EN = 0V, V CLK = 0V, R LIM = 1000 I ,
ST1/ST2 not connected
V EN = 3.3V, V CLK = 0V
ST1 = ST2 = high, I ST1, ST2 = +300mA,
R LIM = 1000 I
ST1 = ST2 = low, I ST1, ST2 = -300mA,
R LIM = 1000 I
8
6
0.65
1
0.6
36
9
1.1
1.5
1.0
V
mA
mA
I
Undervoltage-Lockout Threshold
V UVLO
V DD rising
5.9
6.3
6.9
V
Undervoltage-Lockout Threshold
Hysteresis
Maxim Integrated
V UVLO_HYST
300
mV
2
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