- 您现在的位置：买卖IC网 > PDF目录17245 > MAX15013AASA+ (Maxim Integrated Products)IC DRIVER MOSFET 8-SOIC PDF资料下载
参数资料
| 型号： | MAX15013AASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/18页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 175V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
V DD , IN_H, IN_L......................................................-0.3V to +14V
DL ...............................................................-0.3V to (V DD + 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (V DD + 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T A = +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C) .....1538.5mW
Junction-to-Case Thermal Resistance ( θ JC )(Note 1)
8-Pin SO .......................................................................40°C/W
8-Pin SO-EP....................................................................6°C/W
Junction-to-Ambient Thermal Resistance ( θ JA )(Note 1)
8-Pin SO .....................................................................170°C/W
8-Pin SO-EP..................................................................52°C/W
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
* Per JEDEC 51 Standard Multilayer board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a four-
layer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = V BST = +8V to +12.6V, V HS = GND = 0V, T A = T J = -40°C to +125°C, unless otherwise noted. Typical values are at V DD =
V BST = +12V and T A = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Operating Supply Voltage
V DD Quiescent Supply Current
(No Switching)
V DD Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
V DD
I DD
I DDO
I BST
I BSTO
(Notes 3 and 4)
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V DD (for B/D versions)
f SW = 500kHz, V DD = +12V
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V DD (for B/D versions)
f SW = 500kHz, V DD = V BST = +12V
8.0
70
15
12.6
140
3
40
3
V
μA
mA
μA
mA
UVLO (V DD to GND)
UVLO (BST to HS)
UVLO VDD
UVLO BST
V DD rising
BST rising
6.5
6.0
7.3
6.9
8.0
7.8
V
V
UVLO Hysteresis
LOGIC INPUT
0.5
V
Input-Logic High
V IH_
MAX15012_, CMOS (V DD /2) version
0.67 x
V DD
0.55 x
V DD
V
MAX15013_, TTL version
2
1.65
Input-Logic Low
V IL_
MAX15012_, CMOS (V DD /2) version
0.4 x
V DD
0.33 x
V DD
V
MAX15013_, TTL version
1.4
0.8
Logic-Input Hysteresis
V HYS
MAX15012_, CMOS (V DD /2) version
MAX15013_, TTL version
1.6
0.25
V
2
_______________________________________________________________________________________
相关PDF资料 |
PDF描述 |
|---|---|
| MAX15013CASA+ | IC HALF-BRIDGE MOSFET DVR 8-SOIC |
| MAX627ESA+ | IC DRIVER MOSFET DUAL 8-SOIC |
| MAX15018AASA+ | IC MOSF DRVR HALF BRDG HS 8-SOIC |
| MAX15019BASA+ | IC MOSF DRVR HALF BRDG HS 8-SOIC |
| 695D226X9020G2T | CAP TANT 22UF 20V 10% 3010 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX15013AASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15013AASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15013BASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15013BASA+T | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15013CASA+ | 功能描述:功率驱动器IC 175V/2A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。