参数资料
| 型号： | MAX15030ATB+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .5A 10-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 0.5 V ~ 3.3 V |
| 输入电压： | 1.43 V ~ 3.6 V |
| 电压 - 压降（标准）： | 0.04V @ 500mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA |
| 电流 - 限制（最小）： | 700mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-TDFN-EP（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1412 (CN2011-ZH PDF) |
| 其它名称： | MAX15030ATB+TDKR |
1.425V to 3.6V Input, 500mA Low-Dropout
Regulators with BIAS Input
ABSOLUTE MAXIMUM RATINGS
IN, FB, SS, I.C. to GND..........................................-0.3V to +4.0V
BIAS to GND.............................................................-0.3V to +6V
EN to GND ................-0.3V to the lower of (V BIAS + 0.3V) or +6V
OUT to GND ................................................-0.3V to (V IN + 0.3V)
Output Short-Circuit Duration.....................................Continuous
Operating Junction Temperature Range ...........-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Continuous Power Dissipation (T A = +70°C)
TDFN (derate 24.4mW/°C above +70°C)....................1951mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance ( θ JA ) ............41°C/W
Junction-to-Case Thermal Resistance ( θ JC ) ...................9°C/W
Side-Wettable TDFN
Junction-to-Ambient Thermal Resistance ( θ JA ) ............41°C/W
Junction-to-Case Thermal Resistance ( θ JC ) ...................8°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1; V IN = 1.8V, V OUT = 1.2V, EN = IN for MAX15029, EN = BIAS for MAX15030, I OUT = 100mA, T A = T J = -40°C to
+125°C. Typical values are at T A = +25°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
IN
MAX15029
1.425
3.600
Input Voltage Range
V IN
MAX15030
V BIAS = 3V to 5.5V
BIAS = IN
1.425
3.000
3.600
3.600
V
Undervoltage Lockout
V UVLO
V IN rising
MAX15029
MAX15030
1.275
1.04
1.325
1.09
1.375
1.14
V
Undervoltage Lockout Hysteresis
V UVLO_HYST I OUT = 2mA
50
mV
Quiescent GND Current
I GND
V IN = 1.425V to 3.6V, V OUT = 1.2V,
I OUT = 1mA, V BIAS = 3.3V
V IN = 3.6V, V OUT = 3.3V, I OUT = 100mA
160
180
275
325
410
560
μA
V IN = 3.3V, V OUT = 3.3V, I OUT = 500mA
170
315
470
Input Supply Current in Shutdown
I IN_SD
V EN = 0V (T A = -40°C to +85°C)
0.1
5.5
μA
BIAS (MAX15030)
Input Voltage Range
V BIAS
3
5.5
V
Undervoltage Lockout
Undervoltage Lockout Hysteresis
V BIAS_UVLO V BIAS rising
I OUT = 2mA
2.3
2.5
110
2.7
V
mV
Quiescent Input Supply Current
I BIAS
V EN = V BIAS
20
60
120
μA
V IN = 0V, V OUT = 0V,
V BIAS = 3.3V
1.2
2
Input Supply Current in Shutdown
I BIAS_SD
EN = GND
V IN = 3.3V, V OUT = 0V,
V BIAS = 3.3V
1.2
2
μA
V IN = 3.3V, V OUT = 0V,
V BIAS = 5V
1.5
3
2
_______________________________________________________________________________________
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