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| 型号： | MAX15054AUT+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR HIGH SIDE SOT-23-6 |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 11ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 65V |
| 电源电压： | 4.6 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-6 |
| 包装： | 带卷 (TR) |
High-Side MOSFET Driver for HB LED Drivers
and DC-DC Applications
ABSOLUTE MAXIMUM RATINGS
V DD to GND ............................................................. -0.3V to +6V
LX to GND ................................................................ -2V to +65V
HDRV to LX................................................-0.3V to (V DD + 0.3V)
BST to LX ................................................................. -0.3V to +6V
HI to GND .............................................................. -0.3V to +15V
dV/dt at LX ........................................................................ 50V/ns
Peak Current into HDRV (< 100ns) ...................................... Q 2A
Continuous Current into HDRV ..................................... Q 100mA
Thermal Resistance (Note 1)
Junction-to-Ambient Thermal Resistance ( B JA ) .........115 N C/W
Junction-to-Case Thermal Resistance ( B JC ) ................80 N C/W
Operating Temperature Range ........................ -40 N C to +125 N C
Maximum Junction Temperature .....................................+150 N C
Storage Temperature Range ............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s).................................+300 N C
Continuous Power Dissipation (T A = +70 N C)
6-Pin SOT23 (derate 8.7mW/ N C above +70 N C) .........695.7mW
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V DD = V BST = 5V, V LX = V GND = 0V, T A = T J = -40°C to +125°C, unless otherwise noted. Typical values are at T A = T J = +25°C,
unless otherwise noted.) (Note 2)
PARAMETER
Operating Supply Voltage
V DD Quiescent Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
V DD Undervoltage Lockout
Threshold
SYMBOL
V DD
I DD
I BST
I BSTO
V DD_UVLO
CONDITIONS
No switching
No switching
f SW = 500kHz, no load
V DD rising
MIN
4.6
3.92
TYP
40
65
0.3
4.22
MAX
5.5
75
125
1.3
4.56
UNITS
V
F A
F A
mA
V
V DD Undervoltage Lockout
Threshold Hysteresis
0.2
V
BST-to-LX Undervoltage
Lockout Threshold
V BST_
UVLO
BST rising
3.54
3.82
4.1
V
BST-to-LX Undervoltage
Lockout Threshold Hysteresis
LOGIC INPUT (HI)
0.2
V
HI Logic-High Threshold
HI Logic-Low Threshold
HI Logic-Input Hysteresis
V IH
V IL
3.9
0.9
1.8
V
V
V
HI Input Current
HI Input Resistance
I IN
R IN
HI = GND
-2
300
+2
F A
k I
DRIVER
LX Withstand Voltage
BST Withstand Voltage
V LX_MAX
V BST_MAX
60
65
V
V
LX Pulldown Current
V LX = 2.5V
500
740
1100
F A
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
R ON_HP
R ON_HN
V BST - V LX = 4.5V,
100mA sourcing
V BST - V LX = 4.5V,
100mA sinking
T A = +25 N C
T A = +125 N C
T A = +25 N C
T A = +125 N C
1
1.25
0.75
1
1.5
2
1
1.5
I
I
2
______________________________________________________________________________________
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