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| 型号： | MAX1614EUA+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET HI-SIDE NCH 8-UMAX |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 5 V ~ 26 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-uMAX |
| 包装： | 带卷 (TR) |
MAX1614
High-Side, n-Channel MOSFET
Switch Driver
ABSOLUTE MAXIMUM RATINGS
BATT, SRC to GND.................................................-0.3V to +30V
GATE to SRC ..........................................................-0.3V to +12V
GATE to GND .........................................................-0.3V to +36V
GATE + SRC Sink Current, Continuous .............................2.7mA
LBI, LBO , ON , OFF to GND....................................-0.3V to +12V
LBO Current ..........................................................................5mA
Continuous Power Dissipation (T A = +70°C)
μMAX (derate 4.10mV/°C above +70°C) .....................330mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +160°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V BATT = 15V, T A = 0°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
BATT Operating Range
BATT Shutdown Current
SYMBOL
I SHDN
CONDITIONS
V GATE - V SRC > 3V, SRC = BATT
V BATT = 26V, ON = OFF = unconnected,
I GATE = 0A, device latched off, V LBI = 1.5V
MIN
5
TYP
4
MAX
26
7
UNITS
V
μA
V BATT = 15V, ON = OFF = unconnected,
I GATE = 0A, device latched on, V LBI = 1.5V,
17
30
μA
Quiescent Current
I BATT +
I SRC
SRC = BATT
V BATT = 26V, ON = OFF = unconnected,
I GATE = 0A, device latched on, V LBI = 1.5V,
21
40
μA
SRC = BATT
INTERNAL CHARGE PUMP
GATE Drive Voltage
GATE Drive Output Current
GATE Discharge Current
V GS
Measured from GATE to SRC, V BATT = 15V,
I GATE = 0A
Measured from GATE to SRC, V BATT = V SRC = 5V,
I GATE = 1.5μA
V GATE = V SRC = 15V
V GATE = 4V, device latched off
6.5
3
15
0.5
8
9.0
60
2
V
μA
mA
LOW-BATTERY COMPARATOR
LBI Trip Level
V TH
LBI input falling
1.182
1.20
1.218
V
LBI Trip Hysteresis
0.02V TH
V
Minimum V BATT for Valid LBO
Tested at V LBI = V BATT / 4
0.9
4
V
LBI Input Current
LBO Low Voltage
LBO High Leakage
I LBI
V OL
V OH
V LBI = 1.3V
I SINK = 1mA
V LBO = 11.5V
10
0.4
0.5
nA
V
μA
CONTROL INPUTS ( O N , O F F )
Minimum Input Pullup Current
Tested at 2V
0.5
μA
Maximum Input Pullup Current
Tested at 0.6V
1.5
2
μA
Input Low Voltage
Input High Voltage
V IL
V IH
V BATT = 5V
V BATT = 26V
2.0
0.6
V
V
Minimum Input Pulse Width
t PW
V BATT = 5V
0.5
1.0
μs
2
Maxim Integrated
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