参数资料
型号: MAX1614EUA+T
厂商: Maxim Integrated
文件页数: 8/9页
文件大小: 0K
描述: IC DVR MOSFET HI-SIDE NCH 8-UMAX
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
配置: 高端
输入类型: 非反相
配置数: 1
输出数: 1
电源电压: 5 V ~ 26 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-uMAX
包装: 带卷 (TR)
MAX1614
High-Side, n-Channel MOSFET
Switch Driver
Increasing Low-Battery
Comparator Hysteresis
The MAX1614 contains an on-chip comparator with 2%
hysteresis for low-battery detection. If more than 2%
hysteresis is needed on the low-battery comparator and
LBO is connected to OFF, use the circuit in Figure 5 to
add hysteresis. The circuit of Figure 5 shows LBO con-
trolling an n-channel MOSFET that shorts R2 to add pos-
itive feedback to the trip point. This is necessary to
prevent loading down the 1μA pullup at OFF (Figure 1).
___________________Chip Information
SUBSTRATE CONNECTED TO GND
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maxim-ic.com/packages . Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but
N
LOAD
the drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE NO.
LAND
PATTERN NO.
BATT GATE
SRC
8 μMAX
U8+1
21-0036
90-0092
R1
MAX1614
ON
OFF
N
R2
2N7002
(SOT23)
R3
LBI
GND
LBO
( )
V L = V TH
(
V H = V TH
R1 = 909k ?
R2, R3 = 150k ?
V L = 8.5V
V H = 9.8V
FALLING TRIP POINT V L
R1 + R3
R3
RISING TRIP POINT V H
R1 + R2 + R3
R3
)
HYSTERESIS = 6%
Figure 5. Increasing Hysteresis of the Battery Disconnect
Circuit
8
Maxim Integrated
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