参数资料
型号: MAX1637EEE
厂商: Maxim Integrated Products
文件页数: 12/20页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 16-QSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 100
PWM 型: 电流模式,混合
输出数: 1
频率 - 最大: 338kHz
占空比: 96%
电源电压: 3.15 V ~ 5.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
包装: 管件
Miniature, Low-Voltage,
Precision Step-Down Controller
REF, V CC , and V GG Supplies
The 1.100V reference (REF) is accurate to ±2% over
temperature, making REF useful as a precision system
reference. Bypass REF to GND with a 0.22μF (min)
capacitor. REF can supply up to 50μA for external
loads. Loading REF reduces the main output voltage
slightly because of the reference load-regulation error.
The MAX1637 has two independent supply pins, V CC
and V GG . V CC powers the sensitive analog circuitry of
the SMPS, while V GG powers the high-current MOSFET
drivers. No protection diodes or sequencing require-
ments exist between the two supplies. Isolate V GG from
V CC with a 20 Ω resistor if they are powered from the
same supply. Bypass V CC to GND with a 0.1μF capaci-
tor located directly adjacent to the pin. Use only small-
signal diodes for the boost circuit (10mA to 100mA
Schottky or 1N4148 diodes are preferred), and bypass
V GG to PGND with a 4.7μF capacitor directly at the
package pins. The V CC and V GG input range is 3.15V
to 5.5V.
High-Side Boost Gate Drive (BST)
Gate-drive voltage for the high-side N-channel switch is
generated by a flying-capacitor boost circuit (Figure 2).
The capacitor between BST and LX is alternately
charged from the V GG supply and placed parallel to
the high-side MOSFET’s gate-source terminals.
On start-up, the synchronous rectifier (low-side
MOSFET) forces LX to 0V and charges the boost
capacitor to V GG . On the second half-cycle, the SMPS
turns on the high-side MOSFET by closing an internal
switch between BST and DH. This provides the neces-
sary enhancement voltage to turn on the high-side
switch, an action that boosts the gate-drive signal
above the battery voltage.
Ringing at the high-side MOSFET gate (DH) in discon-
tinuous-conduction mode (light loads) is a natural oper-
ating condition. It is caused by residual energy in the
tank circuit, formed by the inductor and stray capaci-
tance at the switching node, LX. The gate-drive nega-
tive rail is referred to LX, so any ringing there is directly
If the circuit is operating in continuous-conduction
mode, the DL drive waveform is simply the complement
of the DH high-side-drive waveform (with controlled
dead time to prevent cross-conduction or “shoot-
through”). In discontinuous (light-load) mode, the syn-
chronous switch is turned off as the inductor current
falls through zero.
Shutdown Mode and Power-On Reset
SHDN is a logic input with a threshold of about 1.5V
that, when held low, places the IC in its 0.5μA shut-
down mode. The MAX1637 has no power-on-reset cir-
cuitry, and the state of the device is not known on initial
power-up. In applications that use logic to drive SHDN ,
it may be necessary to toggle SHDN to initialize the
part once V CC is stable. In applications that require
automatic start-up, drive SHDN through an external RC
network (Figure 5). The network will hold SHDN low
until V CC stabilizes. Typical values for R and C are 1M Ω
and 0.01μF. For slow-rising V CC , use a larger capacitor.
When cycling V CC , V CC must stay low long enough to
discharge the 0.01μF capacitor, otherwise the circuit
may not start. A diode may be added in parallel with
the resistor to speed up the discharge.
Current-Limiting and Current-
Sense Inputs (CSH and CSL)
The current-limit circuit resets the main PWM latch and
turns off the high-side MOSFET switch whenever the
voltage difference between CSH and CSL exceeds
100mV. This limiting is effective for both current flow
directions, putting the threshold limit at ±100mV. The
tolerance on the positive current limit is ±20%, so the
external low-value sense resistor (R1) must be sized for
80mV / I PEAK , where I PEAK is the peak inductor current
required to support the full load current. Components
must be designed to withstand continuous current
stresses of 120mV / R1.
V IN
coupled to the gate-drive output.
R
V GG
V CC
Synchronous-Rectifier Driver (DL)
Synchronous rectification reduces conduction losses in
the rectifier by shunting the normal Schottky catch
diode with a low-resistance MOSFET switch. Also, the
synchronous rectifier ensures proper start-up of the
boost gate-driver circuit. If the synchronous power
MOSFET is omitted for cost or other reasons, replace it
with a small-signal MOSFET, such as a 2N7002.
SHDN
C
MAX1637
R = 1M Ω
C = 0.01 μ F
Figure 5. Power-On Reset RC Network for Automatic Start-Up
12
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