参数资料
型号: MAX17710G+T
厂商: Maxim Integrated Products
文件页数: 9/18页
文件大小: 0K
描述: IC ENERGY HARVEST MNGR 12UTDFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1
应用: 能量收集
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 12-UFDFN 裸露焊盘
供应商设备封装: 12-UTDFN-EP(3x3)
包装: 标准包装
其它名称: MAX17710G+TDKR
MAX17710
Energy-Harvesting Charger and Protector
Detailed Description
Operation
The MAX17710 controls two main functions related to man-
agement of an energy-harvesting application: charging a
low-capacity cell with overcharge protection and an LDO
regulator output with overdischarge protection. With the
exception of protection features, charging and regulation
functions operate completely independently of one another.
Initial power-up of the device occurs when a cell is con-
nected to the BATT pin. In this state, the device pulls only
1nA (typ) from the cell and LDO functions are disabled. Only
after a charger has been applied and V CHG rises above
4.15V (V CE ) does the device initialize to full operation and
allow discharging.
Charge-Regulator Operation
The device charges the cell from an external energy
source connected to the CHG pin. Whenever the volt-
age on CHG is greater than the voltage on BATT, the
energy-harvesting circuit directly passes current to the
cell without any interaction from the device. When CHG
rises above V CE , the input linear regulator turns on to limit
the charging voltage to 4.125V and protects the cell from
overcharge. Also at this time, any UVLO is reset, allow-
ing the LDO to power the application load. This release
of the lockout is latched by CHG exceeding V CE and
remains active after the removal of the charge voltage.
The state of this latch is off when initial power is applied
to the BATT pin.
While charging, the device consumes approximately
625nA from the CHG source until the voltage on CHG
exceeds 4.15V. Above 4.15V, the IC enters dropout and
BATT quiescent current increases from 1nA to 450nA.
CHG Shunt
Whenever a harvest source pulls the CHG pin above
5.3V, an internal shunt regulator enables a path to GND
to limit the voltage at the CHG pin. The internal shunt
path can sustain currents up to 50mA. If it is possible for
the harvest source to exceed this power limit, an external
protection circuit is required to prevent damage to the
device. Figure 1 shows the typical application charge cir-
cuit harvesting from high-voltage charge sources. Note
that a 0.22 F F on CHG is recommended for shunt stability
when charging from high-voltage sources.
In the application circuit example, the cell is charged by
several high-voltage harvest sources. Whenever either har-
vest source voltage is higher than the cell voltage, charge
is transferred directly. If either charge source exceeds
4.15V, the device begins to limit current flow to regulate the
cell’s voltage to 4.125V. If either charge source exceeds
5.3V, the internal CHG shunt discharges up to 50mA
through the device to GND to protect the CHG pin.
LOAD V DD
THINERGY
MEC101
BATT
SEL2
REG
1μF
EVENT
SEL1
DETECTOR
0.22μF
CHG
AE
MECHANICAL,
RF, PIEZO,
OR OTHER
MAX17710
LOAD V DD
HIGH-VOLTAGE AC
CHARGING SOURCE
(SOLAR, PIEZO)
HIGH-VOLTAGE DC
CHARGING SOURCE
(SOLAR, PIEZO)
LX
LCE
MICROCONTROLLER
FB
GND
EP
PGND
PCKP
10μF
Figure 1. Typical Application Charge Circuit Harvesting from High-Voltage Charge Sources
Maxim Integrated
9
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