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| 型号： | MAX1809ETI+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC DDR TERMINATION 28-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| 应用： | 转换器，DDR |
| 输入电压： | 3 V ~ 5.5 V |
| 输出数： | 1 |
| 输出电压： | 1.1 V ~ 5.5 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-QSOP |
| 包装： | 管件 |
3A, 1MHz, DDR Memory Termination Supply
ABSOLUTE MAXIMUM RATINGS
V CC , IN to GND ........................................................-0.3V to +6V
IN to V CC .............................................................................±0.3V
GND to PGND.....................................................................±0.3V
SHDN , SS, FB, T OFF , R REF ,
EXTREF to GND.......................................-0.3V to (V CC + 0.3V)
LX Current (Note 1).............................................................±4.7A
REF Short Circuit to GND Duration ............................Continuous
Continuous Power Dissipation (T A = +70°C)
28-Pin QFN (derate 20mW/°C above +70°C;
part mounted on 1in 2 of 1oz copper) ..............................1.6W
16-Pin QSOP (derate 12.5mW/°C above +70°C;
part mounted on 1in 2 of 1oz copper) .................................1W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: LX has clamp diodes to PGND and IN. If continuous current is applied through these diodes, thermal limits must be
observed.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = V CC = 3.3V, V EXTREF = 1.1V, T A = 0°C to +85°C , unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Voltage
Feedback Voltage Accuracy
(V FB - V EXTREF )
V IN ,V CC
V IN = V CC = 3V to 5.5V, I LOAD = 0,
V EXTREF = 1.25V (Note 2)
3.0
-12
5.5
+12
V
mV
Feedback Load Regulation Error
? V FB
I LOAD = -3A to +3A, V EXTREF = 1.25V
20
mV
External Reference Voltage
Range
V EXTREF
V IN = V CC = 3V to 5.5V
V REF -
0.01
V IN -
1.7
V
Reference Voltage
Reference Load Regulation
V REF
I REF = -1μA to +10μA
1.078
1.100
0.5
1.122
2.0
V
mV
PMOS Switch
On-Resistance
NMOS Switch
On-Resistance
Current-Limit Threshold
R PMOS
R NMOS
I LIMIT
I LX = 0.5A
I LX = 0.5A
V IN > V LX
V IN = 4.5V
V IN = 3V
V IN = 4.5V
V IN = 3V
3.5
90
110
70
80
4.1
200
250
150
200
4.7
m ?
m ?
A
Switching Frequency
No Load Supply Current
f SW
I CC
I IN
(Note 3)
f SW = 500kHz
f SW = 500kHz
1
16
1
MHz
mA
Shutdown Supply Current
Thermal-Shutdown Threshold
I SHDN
SHDN = GND, I CC + I IN
Hysteresis = 15 ° C
<1
160
15
μA
° C
Undervoltage Lockout Threshold
V CC falling, hysteresis = 90mV
2.5
2.6
2.7
V
FB Input Bias Current
I FB
V FB = V EXTREF + 0.1V
0
60
250
nA
R TOFF = 30.1k ?
0.24
0.30
0.37
Off-Time
t OFF
R TOFF = 110k ?
0.9
1.0
1.1
μs
Startup Off-Time
R TOFF = 499k ?
3.8
4.5
4 x t OFF
5.2
μs
On-Time
t ON
(Note 3)
0.35
μs
2
_______________________________________________________________________________________
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