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参数资料
| 型号： | MAX1917EEE+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 5/18页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR SYNC BUCK 16-QSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 控制器，DDR |
| 输入电压： | 4.5 V ~ 22 V |
| 输出数： | 2 |
| 输出电压： | 0.4 V ~ 5 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-QSOP |
| 包装： | 带卷 (TR) |
Tracking, Sinking and Sourcing, Synchronous Buck
Controller for DDR Memory and Termination Supplies
ELECTRICAL CHARACTERISTICS (continued)
(V+ = 12V, V EN/HSD = V DDR = 2.5V, C VL = 4.7μF, C VTTR = 1μF, C REF = 0.22μF, V FSEL = 0, ILIM = VL, PGND = LX = POK = GND,
BST = VL. Specifications are for T A = -40 ° C to +85 ° C , unless otherwise specified.) (Note 2)
PARAMETER
Reference UVLO
V+ = VL = 5V
CONDITIONS
MIN
1.5
TYP
MAX
1.7
UNITS
V
VTTR
VTTR Output Voltage Range
I VTTR = -5mA to +5mA
0
49.5
1.8
50.5
V
VTTR Output Accuracy
I VTTR = -25mA to +25mA, V DDR = 1.8V
I VTTR = -25mA to +25mA, V DDR = 3.6V
49
49.5
51
50.5
%V DDR
OSCILLATOR
FSEL = VL
2.18
2.83
On Time (Note 1)
Minimum Off Time (Note 1)
FSEL not connected
FSEL = REF
FSEL = GND
1.45
1.09
0.82
1.89
1.41
1.00
400
μs
ns
CURRENT LIMIT
LX to PGND, ILIM = VL
85
110
Current-Limit Threshold
(Positive Direction)
Current-Limit Threshold
(Negative Direction)
LX to PGND, R ILIM = 100k ?
LX to PGND, R ILIM = 400k ?
LX to PGND, ILIM = VL, with percentage of positive
current-limit threshold
35
160
-90
60
230
-130
mV
%
VL REGULATOR
Output Voltage
RMS Output Current
Bypass Capacitor
5.5V < V+ < 14V; 1mA < I VL < 35mA
ESR < 100m ?
4.8
2.2
5.2
35
V
mA
μF
FSEL LOGIC
Logic Input Current
Logic GND Level
3
0.5
μA
V
Logic REF Level
Logic Float Level
Logic VL Level
FSEL = VREF
FSEL floating
FSEL = VL
1.65
3.15
VL - 0.4
2.35
3.85
V
V
V
EN/HSD LOGIC
EN/HSD Shutdown Current
I EN/HSD for V EN/HSD = 0.8V
0.5
3.0
μA
Logic High
Logic Low
VL = V+ = 4.5V to 5.5V, 100mV hysteresis
VL = V+ = 4.5V to 5.5V
1.45
0.8
V
V
POWER-OK OUTPUT
Upper VTT Threshold
Lower VTT Threshold
110
86
114
90
%V DDR
/2
%V DDR
/2
_______________________________________________________________________________________
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