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参数资料
| 型号： | MAX1960EEP+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 19/29页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 20-QSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 50 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 1.12MHz |
| 占空比： | 90% |
| 电源电压： | 2.35 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 20-SSOP（0.154"，3.90mm 宽） |
| 包装： | 管件 |
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2.35V to 5.5V, 0.5% Accurate, 1MHz PWM
Step-Down Controllers with Voltage Margining
FEEDBACK DIVIDER
ERROR AMPLIFIER
MODULATOR
OUTPUT FILTER
V 1
0.8V
R1
R2
Gm
R3
V IN /V RAMP
R S
L1
C9
V 2
Figure 7. Open-Loop Transfer Model
R ESR
C OUT
R LOAD
(4) Gate threshold voltage (V TH(MIN) )
(5) Turn-on/turn-off times
(6) Turn-on/turn-off delays
At high switching rates, dynamic characteristics (para-
meters 1, 2, 5, and 6) that predict switching losses may
have more impact on efficiency than R DS(ON) , which pre-
dicts DC losses. Q G includes all capacitance associated
with charging the gate, and best performance is
achieved with a low total gate charge. Q G also helps
predict the current needed to drive the gate at the
selected operating frequency. This is very important
because the output current from the charge pump is
finite (50mA, max) and is used to drive the gates of the
MOSFETs as well as provide bias for the IC. R DS(ON) is
important as well, as it is used for current sensing in the
MAX1960/MAX1961. R DS(ON) also causes power dissi-
pation during the on-time of the MOSFET.
Choose Q G to be as low as possible. Ensure that:
Choose R DS(ON) to provide the desired I LOAD(MAX) at
the desired current-limit threshold voltage (see the
Setting the Current Limit section).
MOSFET RC Snubber Circuit
Fast-switching transitions can cause ringing due to res-
onating circuit parasitic inductance and capacitance at
the switching nodes. This high-frequency ringing
occurs at LX rising and falling transitions, and may
introduce current-sensing errors and generate EMI. To
dampen this ringing, a series RC snubber circuit can
be added across each MOSFET switch (Figure 8).
Typical values for the snubber components are C SNUB
= 4700pF and R SNUB = 1 ? , however, the ideal values
for snubber components will depend on circuit para-
sitics. Below is the procedure for selecting the compo-
nent values of the series RC snubber circuit:
1) Connect a scope probe to measure V LX to GND,
and observe the ringing frequency, f R .
2) Find the capacitor value (connected from LX to
GND) that reduces the ringing frequency by half.
Q G 1 + Q G 2 ≤
50mA
f S
3) The circuit parasitic capacitance, C PAR , at LX is then
equal to 1/3 of the value of the added capacitance
above.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX1960EEP+ | 功能描述:DC/DC 开关控制器 1MHz PWM Step-Down RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| MAX1960EEP+T | 功能描述:DC/DC 开关控制器 1MHz PWM Step-Down RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| MAX1960EEP-T | 功能描述:DC/DC 开关控制器 RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| MAX1960EVKIT | 功能描述:电源管理IC开发工具 Evaluation Kit for the MAX1960 MAX1961 MAX1962 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX1961EEP | 功能描述:DC/DC 开关控制器 RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
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