参数资料
| 型号： | MAX1969EUI+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/16页 |
| 文件大小： | 0K |
| 描述： | IC DRVR POWER 28-TSSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 热电冷却器 |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.173"，4.40mm 宽）裸露焊盘 |
| 供应商设备封装： | 28-TSSOP 裸露焊盘 |
| 包装： | 带卷 (TR) |
Power Drivers for Peltier TEC Modules
ABSOLUTE MAXIMUM RATINGS
V DD to GND ..............................................................-0.3V to +6V
SHDN , MAXV, MAXIP, MAXIN, CTLI,
FREQ to GND .......................................................-0.3V to +6V
COMP, OS1, OS2, CS, REF,
ITEC to GND...........................................-0.3V to (V DD + 0.3V)
PV DD 1, PV DD 2 to GND ...............................-0.3V to (V DD + 0.3V)
PV DD 1, PV DD 2 to V DD .................................................. -0.3V to +0.3V
PGND1, PGND2 to GND .......................................-0.3V to +0.3V
Peak LX Current (MAX1968) (Note 1).................................±4.5A
Peak LX Current (MAX1969) (Note 1)....................................+9A
Continuous Power Dissipation (T A = +70°C)
28-Pin TSSOP-EP (derate 23.8mW/°C above +70°C).....1.9W
Operating Temperature Range ...........................-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
COMP, REF, ITEC Short to GND ...................................Indefinite
Note 1: LX has internal clamp diodes to PGND and PV DD_ . Applications that forward bias these diodes should take care not to
exceed the IC’s package power dissipation limits.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V DD = PV DD 1 = PV DD 2 = SHDN = 5V, PGND1 = PGND2 = FREQ = GND, CTLI = MAXV = MAXIP = MAXIN = REF, C REF = 1μF,
C COMP = 0.1μF, L LX_ = 3.3μH, C CS = C OS2 = 1μF, I TEC < 3A RMS (MAX1968), I TEC < 6A RMS (MAX1969), T A = 0°C to +85°C , unless
otherwise noted. Typical values are at T A = +25 ° C.)
PARAMETER
Input Supply Range
SYMBOL
V DD
CONDITIONS
MIN
3.0
TYP
MAX
5.5
UNITS
V
V DD = 5V, I TEC = 0 to ± 3A,
V OUT = V OS1 - V OS2 (MAX1968)
-4.3
+4.3
Output Voltage Range
V OUT
V DD = 5V, I TEC = 0 to 6A,
V OUT = V OS1 (MAX1969)
V DD = 3V, I TEC = 0 to ± 3A,
V OUT = V OS1 - V OS2 (MAX1968)
-2.3
4.3
+2.3
V
V DD = 3V, I TEC = 0 to 6A,
V OUT = V OS1 (MAX1969)
2.3
Maximum TEC
Current
I TEC(MAX)
MAX1968
MAX1969
± 3
6
A
Reference Voltage
Reference Load
Regulation
V REF
Δ V REF
V DD = 3V to 5.5V, I REF = 150μA
V DD = 3V to 5.5V, I REF = +10μA to -1mA
1.485
1.500
1.2
1.515
5
V
mV
Current-Sense
Threshold Accuracy
Switch-Fault Reset
Voltage
V OS1 < V CS
V OS1 > V CS
V MAXI_ = V REF
V MAXI_ = V REF /3
V MAXI_ = V REF
V MAXI_ = V REF /3
140
40
140
40
50
150
50
150
50
150
160
60
160
60
250
mV
mV
NFET On-Resistance
PFET On-Resistance
NFET Leakage
R DS(ON-N)
R DS(ON-P)
I LEAK(N)
V DD = 5V, I = 0.5A
V DD = 3V, I = 0.5A
V DD = 5V, I = 0.5A
V DD = 3V, I = 0.5A
V LX = V DD = 5V, T A = +25°C
V LX = V DD = 5V, T A = +85°C
0.04
0.06
0.06
0.09
0.02
1
0.07
0.08
0.10
0.12
10
Ω
Ω
μA
2
_______________________________________________________________________________________
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